公开(公告)号：US20160093499A1

公开(公告)日：2016-03-31

申请号：US14869988

申请日：2015-09-29

Applicant: Renesas Electronics Corporation

Inventor： Kazuharu YAMABE ,  Shinichiro ABE ,  Shoji YOSHIDA ,  Hideaki YAMAKOSHI ,  Toshio KUDO ,  Seiji MURANAKA ,  Fukuo OWADA ,  Daisuke OKADA

IPC: H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L21/28282 ,  H01L21/28194 ,  H01L29/66833 ,  H01L29/792

Abstract: To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid.

Abstract translation: 提供具有改进性能的半导体器件，同时提高半导体器件的制造步骤中的吞吐量。 在半导体衬底上形成由第一，第二，第三，第四和第五绝缘膜构成的绝缘膜部分。 第二绝缘膜是第一电荷存储膜，第四绝缘膜是第二电荷存储膜。 第一电荷储存膜含有硅和氮; 第三绝缘膜含有硅和氧; 并且第二电荷储存膜含有硅和氮。 第三绝缘膜的厚度小于第一电荷存储膜的厚度，并且第二电荷存储膜的厚度大于第一电荷存储膜的厚度。 第三绝缘膜通过用含水处理液处理第一电荷存储膜的上表面而形成。