公开(公告)号：US20130341727A1

公开(公告)日：2013-12-26

申请号：US13945282

申请日：2013-07-18

Applicant: Renesas Electronics Corporation

Inventor： Yasuhiro SHIMAMOTO ,  Jiro YUGAMI ,  Masao INOUE ,  Masaharu MIZUTANI

IPC: H01L27/092

CPC classification number: H01L27/092 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: Disclosed is a semiconductor device including a first MISFET of an n channel type and a second MISFET of a p channel type, each of the MISFETs being configured with a gate insulating film featuring a silicon oxide film or a silicon oxynitride film and a gate electrode including a conductive silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film in both the first and second MISFETs such that metal atoms with a surface density of 1×1013 to 5×1014 atoms/cm2 are contained near the interface and each of the first and second MISFETs having a channel region containing an impurity the concentration of which is equal to or lower than 1.2×1018/cm3.

Abstract translation: 公开了一种包括n沟道型的第一MISFET和ap沟道型的第二MISFET的半导体器件，每个MISFET被配置有具有硅氧化膜或氮氧化硅膜的栅极绝缘膜和包括 位于栅极绝缘膜上的导电硅膜。 金属元素如Hf在第一和第二MISFET中的栅电极和栅极绝缘膜之间的界面附近引入，使得表面密度为1×1013至5×1014原子/ cm2的金属原子包含在界面附近 并且第一和第二MISFET中的每一个具有含有浓度等于或低于1.2×1018 / cm3的杂质的沟道区。