公开(公告)号：US20250046612A1

公开(公告)日：2025-02-06

申请号：US18776808

申请日：2024-07-18

Applicant: Renesas Electronics Corporation

Inventor： Tadashi YAMAGUCHI ,  Shinji INOUE

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: The reliability of a semiconductor device is improved. In this disclosure, a gate insulating film is formed on a silicon carbide semiconductor substrate in a process using a material gas containing a halogen element and a metal element by an ALD method.

公开(公告)号：US20230068043A1

公开(公告)日：2023-03-02

申请号：US17875096

申请日：2022-07-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shinji INOUE

IPC: H01L27/11582 ,  H01L27/11568 ,  H01L29/66 ,  H01L29/20 ,  H01L29/792 ,  H01L21/28

Abstract: A semiconductor device capable of shortening an erasing time and suppressing deterioration of retention characteristics is provided. A semiconductor device includes: a semiconductor substrate having a main surface; a gate insulating film formed on the main surface; and a gate electrode formed on the gate insulating film. The gate insulating film includes a first silicon nitride film, and a first silicon oxide film arranged between the main surface and the first silicon nitride film and in contact with the first silicon nitride film. A Si—Si bond is formed in a boundary portion between the first silicon oxide film first silicon nitride film.