公开(公告)号：US20240113154A1

公开(公告)日：2024-04-04

申请号：US17990733

申请日：2022-11-20

Applicant: RichWave Technology Corp.

Inventor： Chia-Wei Chang ,  Yan-Han Huang ,  Chin-Chia Chang

IPC: H01L27/08 ,  H01L23/64

CPC classification number: H01L28/10 ,  H01L23/645

Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

公开(公告)号：US12176385B2

公开(公告)日：2024-12-24

申请号：US17990733

申请日：2022-11-20

Applicant: RichWave Technology Corp.

Inventor： Chia-Wei Chang ,  Yan-Han Huang ,  Chin-Chia Chang

IPC: H01L23/64 ,  H01L27/08 ,  H01L49/02

Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.