公开(公告)号：US20240113154A1

公开(公告)日：2024-04-04

申请号：US17990733

申请日：2022-11-20

Applicant: RichWave Technology Corp.

Inventor： Chia-Wei Chang ,  Yan-Han Huang ,  Chin-Chia Chang

IPC: H01L27/08 ,  H01L23/64

CPC classification number: H01L28/10 ,  H01L23/645

Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

公开(公告)号：US12176385B2

公开(公告)日：2024-12-24

申请号：US17990733

申请日：2022-11-20

Applicant: RichWave Technology Corp.

Inventor： Chia-Wei Chang ,  Yan-Han Huang ,  Chin-Chia Chang

IPC: H01L23/64 ,  H01L27/08 ,  H01L49/02

Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

公开(公告)号：US20230327629A1

公开(公告)日：2023-10-12

申请号：US17849698

申请日：2022-06-26

Applicant: RichWave Technology Corp.

Inventor： Chin-Chia Chang ,  Shih-Meng Lin ,  Shih-Che Chen

IPC: H03H3/08 ,  H03H9/02 ,  H03H9/145

CPC classification number: H03H3/08 ,  H03H9/14547 ,  H03H9/02992

Abstract: An acoustic wave device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface. The transducer includes a first electrode, a second electrode, and at least one protrusion. The first electrode extends along a first direction and has a first end. The second electrode extends along the first direction and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The at least one protrusion is disposed at the first end of the first electrode. The at least one protrusion extends along the first direction and partially obstruct the first end.