公开(公告)号：US06663281B2

公开(公告)日：2003-12-16

申请号：US09682591

申请日：2001-09-25

申请人： Richard Aufrichtig ,  Paul R. Granfors ,  Gerhard Brunst ,  Kenneth S. Kump

发明人： Richard Aufrichtig ,  Paul R. Granfors ,  Gerhard Brunst ,  Kenneth S. Kump

IPC分类号： G01D1800

CPC分类号： H04N5/2178 ,  G09G2320/0693 ,  G09G2330/08 ,  G09G2330/10 ,  H04N5/32

摘要： An x-ray system (14) including a source of x-rays (15) and a detector (22) monitors the detector with a control (36) that calibrates the detector during a calibration phase of operation and powers the detector during use phases of operation occurring at different times. A processor (28, 36) reads the data created by the pixel elements, analyzes the data and identifies pixel elements corresponding to data indicating defective pixel elements during the calibration phase of operation and during a predetermined portion of a plurality of the use phases of operation.

摘要翻译： 包括X射线源（15）和检测器（22）的X射线系统（14）利用控制器（36）对检测器进行监视，该控制器在校准操作阶段期间对检测器进行校准，并在使用阶段为检测器供电 的操作发生在不同的时间。 处理器（28,36）读取由像素元素创建的数据，分析数据并且在操作的校准阶段期间和在多个使用操作阶段的预定部分期间识别与指示缺陷像素元素的数据相对应的像素元素 。

公开(公告)号：US06393097B1

公开(公告)日：2002-05-21

申请号：US09747864

申请日：2000-12-22

申请人： Richard Aufrichtig ,  Harrie Netel ,  Paul R. Granfors ,  Gerhard Brunst

发明人： Richard Aufrichtig ,  Harrie Netel ,  Paul R. Granfors ,  Gerhard Brunst

IPC分类号： G01T120

CPC分类号： H04N5/325 ,  G01T1/1644 ,  G01T1/2018 ,  H04N5/32

摘要： A method for minimizing motion artifacts in Dual Energy Subtraction digital radiographic imaging applications by minimizing the time lapse between the two x-ray exposure frames. This is accomplished by acquiring the two x-ray exposure frames relatively consecutively without a corresponding offset frame reading in-between the two x-ray frame exposures. Preferably, the offset frames are acquired following the x-ray exposure frames with a corresponding timing sequence which is correlated to the x-ray frame exposure and reading sequence. The method includes the steps of exposing a radiographic detector at a first energy level for a time period t1; reading the radiographic detector to obtain a first exposure reading; exposing the radiographic detector at a second energy level for a time period t2; reading the radiographic detector to obtain a second exposure reading; after a time period equal to t1, reading the radiographic detector to obtain an offset reading; and subtracting the offset reading from the first and second exposure readings.

摘要翻译： 一种通过最小化两个X射线曝光帧之间的时间间隔来最小化双能量减影数字放射照相成像应用中的运动伪影的方法。 这通过相对连续地获取两个X射线曝光帧而在两个x射线帧曝光之间没有相应的偏移帧读取来实现。 优选地，在具有与x射线帧曝光和读取序列相关的相应定时序列的x射线曝光帧之后获取偏移帧。 该方法包括以下步骤：在第一能级暴露一时间段t1的射线检测器; 读取放射线检测器以获得第一曝光读数; 将放射线检测器在第二能级暴露一段时间t2; 读取放射线检测器以获得第二曝光读数; 在等于t1的时间之后，读取放射线检测器以获得偏移读数; 并从第一和第二曝光读数减去偏移读数。

公开(公告)号：US5444234A

公开(公告)日：1995-08-22

申请号：US312083

申请日：1994-09-26

申请人： Wolfgang Hennerici ,  Gerhard Brunst ,  Enno Holzenkaempfer

发明人： Wolfgang Hennerici ,  Gerhard Brunst ,  Enno Holzenkaempfer

IPC分类号： G01B11/03 ,  G01D5/26 ,  H01L27/144 ,  G05D3/12 ,  H01L27/14

CPC分类号： H01L27/1446 ,  G01D5/26

摘要： A position transmitter for acquiring the position of a light beam has at least one group of photodiodes arranged neighboring one another and fashioned strip-shaped such that at least two, typically 5-10, strip-shaped electrodes of a photodiode structure are at least partially covered by the light beam or particle beam whose position is to be acquired. An evaluation circuit measures the photocurrent or a correlated quantity of the individual strip electrodes and indicates the position of the beam on the basis of the distribution of the strengths of the photo currents.

摘要翻译： 用于获取光束位置的位置传感器具有至少一组彼此相邻布置的光电二极管并且被形成为带状，使得光电二极管结构的至少两个通常为5-10的条形电极至少部分地 被要获取位置的光束或粒子束覆盖。 评估电路测量单个条形电极的光电流或相关量，并基于光电流的强度分布来指示光束的位置。

公开(公告)号：US4896216A

公开(公告)日：1990-01-23

申请号：US232230

申请日：1988-08-15

申请人： Gerhard Brunst ,  Klaus Rohleder

发明人： Gerhard Brunst ,  Klaus Rohleder

IPC分类号： H04N5/335 ,  H01L27/146 ,  H04N1/028 ,  H04N1/19 ,  H04N1/193

CPC分类号： H04N1/1931 ,  H01L27/14665

摘要： A linear opto-electronic image sensor has m groups of n sensor elements lying side-by-side on an integrated circuit, the sensor elements being connectable to inputs of a read-out circuit by switching transistors and data lines. M group associated data are being provided with n signal groups successively supplied to the m inputs of the read-out circuit. Every signal group is composed of m sensor signals that are simultaneously derived from the sensor elements having the same order and number within the individual groups.

摘要翻译： 线性光电图像传感器具有m组n个传感器元件并排在集成电路上，传感器元件可通过开关晶体管和数据线连接到读出电路的输入。 M组相关数据被提供有连续提供给读出电路的m个输入的n个信号组。 每个信号组由m个传感器信号组成，这些传感器信号同时从各组内具有相同次序和数量的传感器元件导出。

公开(公告)号：US4882296A

公开(公告)日：1989-11-21

申请号：US204962

申请日：1988-06-08

申请人： Martin Hoheisel ,  Gerhard Brunst ,  Enno Holzenkaempfer

发明人： Martin Hoheisel ,  Gerhard Brunst ,  Enno Holzenkaempfer

IPC分类号： H01L31/04 ,  H01L21/31 ,  H01L21/321 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/10 ,  H01L31/20

CPC分类号： H01L21/321 ,  H01L31/0224 ,  H01L31/095

摘要： A highly blocking diode structure having a thin film a-Si:H (amorphous silicon containing hydrogen) layer, suitable for use in constructing image sensor arrays, has two conductive electrodes disposed on opposite sides of the a-Si:H thin film layer. The structure is constructed on an electrically insulating substrate and includes a barrier layer disposed between the a-Si:H layer and the top electrode. The top electrode may consist of indium tin oxide or of palladium silicide, and the barrier layer may consist of silicon oxide produced by converting the surface of the a-Si:H layer. The barrier layer is disposed on that side of the a-Si:H layer opposite the substrate. The barrier layer significantly improves the behavior of the contacts and the stability of the boundary surface between the a-Si:H layer and the transparent metal oxide comprising the electrode. The sequence for constructing the diode arrangement is considerably simplifed.

摘要翻译： 具有适用于构造图像传感器阵列的薄膜a-Si：H（非晶硅含氢）层的高阻挡二极管结构具有设置在a-Si：H薄膜层的相对侧上的两个导电电极。 该结构构造在电绝缘基板上，并且包括设置在a-Si：H层和顶部电极之间的阻挡层。 顶部电极可以由铟锡氧化物或者硅化钯组成，并且阻挡层可以由通过转换a-Si：H层的表面而产生的氧化硅组成。 阻挡层设置在与衬底相对的a-Si：H层的那一侧上。 阻挡层显着改善了接触的行为和a-Si：H层和包含电极的透明金属氧化物之间的边界面的稳定性。 用于构建二极管布置的顺序相当简单。