摘要:
The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin film deposition sample substrate for allowing a thin film substance flowing in from the thin film deposition furnace to adhere while X-ray incidence and extraction windows being provided on the side walls of the measuring unit, wherein X-ray is irradiated on the thin film deposition sample substrate in the measuring unit through the X-ray incidence window by means of a thin film measuring unit provided at the outside of the thin film deposition furnace, and the X-ray reflected from the thin film deposition sample substrate is sensed through the X-ray extraction window.
摘要:
Apparatus for X-ray analysis has a combination of a rotating target X-ray tube and a composite monochromator. The composite monochromator has a first and a second elliptic monochromators joined with each other side by side. Each of the elliptic monochromators has a first focal point at which an X-ray focal spot on a target of the X-ray tube is disposed. Each of the elliptic monochromators has a synthetic multilayered thin film whose d-spacing varies continuously along an elliptic-arc. The shortest distance between the X-ray focal spot and the composite monochromator is set to 40 to 100 mm. Under the shortest distance condition, the effective focal spot size on the target is set to 40 to 100 micrometers to obtain the maximum X-ray intensity on a sample to be analyzed.