公开(公告)号：US06933569B2

公开(公告)日：2005-08-23

申请号：US10668349

申请日：2003-09-24

申请人： Risho Koh ,  Shigeharu Yamagami ,  Jong-wook Lee ,  Hitoshi Wakabayashi ,  Yukishige Saito ,  Atsushi Ogura ,  Mitsuru Narihiro ,  Kohichi Arai ,  Hisashi Takemura ,  Tohru Mogami ,  Toyoji Yamamoto ,  Yukinori Ochiai

发明人： Risho Koh ,  Shigeharu Yamagami ,  Jong-wook Lee ,  Hitoshi Wakabayashi ,  Yukishige Saito ,  Atsushi Ogura ,  Mitsuru Narihiro ,  Kohichi Arai ,  Hisashi Takemura ,  Tohru Mogami ,  Toyoji Yamamoto ,  Yukinori Ochiai

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/01 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L21/01

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78621

摘要： A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.

摘要翻译： 半导体器件包括形成在绝缘体上的半导体层，形成在半导体层上的栅极绝缘膜，形成在栅极绝缘膜上并沿第一方向延伸的栅电极，在两侧的半导体层中形成的源/漏区 所述半导体层中的主体接触区域，其中比所述栅极绝缘膜更厚的场绝缘膜介于所述半导体层和所述栅电极的延伸部分之间的部分隔离区域，以及完全隔离区域 去除绝缘体上的半导体层。 完全隔离区域形成为与平行于源极/漏极区域的第一方向的一侧的至少一部分接触。

公开(公告)号：US08486811B2

公开(公告)日：2013-07-16

申请号：US13067584

申请日：2011-06-10

申请人： Mitsuru Narihiro

发明人： Mitsuru Narihiro

IPC分类号： H01L21/20

CPC分类号： H01L29/785 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842

摘要： A process for manufacturing a semiconductor device, in which a current flows in a deflected part that includes a semiconductor, includes forming a straight beam having a doubly-clamped beam structure that includes the semiconductor by forming a void under the beam, filling the void with a liquid, and contacting a center of the beam with a bottom of the void by drying the liquid to form the deflected part.

摘要翻译： 一种制造半导体器件的方法，其中电流在包括半导体的偏转部分中流动，包括通过在光束下方形成空隙形成具有双夹紧光束结构的直梁，将该空隙填充到 液体，并通过干燥液体使梁的中心与空隙的底部接触以形成偏转的部分。

公开(公告)号：US20070241414A1

公开(公告)日：2007-10-18

申请号：US11628976

申请日：2005-06-03

申请人： Mitsuru Narihiro

发明人： Mitsuru Narihiro

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842

摘要： This invention relates to a semiconductor device having a beam made of a semiconductor to which strain is introduced by deflection, and a current is permitted to flow in the beam.

摘要翻译： 本发明涉及一种半导体器件，其具有由半导体制成的光束，通过偏转引入应变，并且允许电流在光束中流动。

公开(公告)号：US07989855B2

公开(公告)日：2011-08-02

申请号：US11628976

申请日：2005-06-03

申请人： Mitsuru Narihiro

发明人： Mitsuru Narihiro

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842

摘要： This invention relates to a semiconductor device having a beam made of a semiconductor to which strain is introduced by deflection, and a current is permitted to flow in the beam.

摘要翻译： 本发明涉及一种半导体器件，其具有由半导体制成的光束，通过偏转引入应变，并且允许电流在光束中流动。

公开(公告)号：US06605397B2

公开(公告)日：2003-08-12

申请号：US09863317

申请日：2001-05-24

申请人： Mitsuru Narihiro

发明人： Mitsuru Narihiro

IPC分类号： G03F900

CPC分类号： G03F7/2059 ,  G03F1/68 ,  G03F7/203 ,  Y10S430/143

摘要： Pattern data are divided into light beam exposure pattern data and electron beam exposure pattern data free of any overlap margin. Overlap margins are given without size-reduction to the electron beam exposure pattern in order to avoid any disappearance of any parts of the fine pattern.

公开(公告)号：US20110244668A1

公开(公告)日：2011-10-06

申请号：US13067584

申请日：2011-06-10

申请人： Mitsuru Narihiro

发明人： Mitsuru Narihiro

IPC分类号： H01L21/20

CPC分类号： H01L29/785 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842

摘要： A process for manufacturing a semiconductor device, in which a current flows in a deflected part that includes a semiconductor, includes forming a straight beam having a doubly-clamped beam structure that includes the semiconductor by forming a void under the beam, filling the void with a liquid, and contacting a center of the beam with a bottom of the void by drying the liquid to form the deflected part.

摘要翻译： 一种制造半导体器件的方法，其中电流在包括半导体的偏转部分中流动，包括通过在光束下方形成空隙形成具有双夹紧光束结构的直梁，将该空隙填充到 液体，并通过干燥液体使梁的中心与空隙的底部接触以形成偏转的部分。