公开(公告)号：US07282736B2

公开(公告)日：2007-10-16

申请号：US10731033

申请日：2003-12-10

申请人： Satoshi Murakami ,  Noriko Miyagi

发明人： Satoshi Murakami ,  Noriko Miyagi

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/076 ,  H01L21/01

CPC分类号： H01L51/5203 ,  H01L27/1248 ,  H01L27/3244 ,  H01L51/56

摘要： (Object) In a light-emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier. (Solving Means) The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.

摘要翻译： （对象物）在发光装置中，优选的是，发光元件下方的膜的表面具有平坦度。 因此，在形成膜之后进行膜表面的平坦化处理。 本发明提出能够使上述平坦化容易的发光装置的结构。 （解决方案）使用与形成在第一膜上的布线相同的层来制造第二膜。 由此，可以防止在形成布线期间在发光元件下方的第一膜的一部分被蚀刻以在第一膜的表面形成不均匀性。 此外，通过提供第二膜以使局部平坦化，使第三膜的表面更高。

公开(公告)号：US07867822B2

公开(公告)日：2011-01-11

申请号：US12618542

申请日：2009-11-13

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/01

CPC分类号： H01L21/2007 ,  H01L21/8221 ,  H01L21/823487 ,  H01L21/823885 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/3512

摘要： A method includes forming a switching device which includes a vertical channel spaced apart from a semiconductor substrate, and forming a storage device which is positioned on opposed sides of the switching device. The storage device includes a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.

摘要翻译： 一种方法包括形成开关装置，其包括与半导体衬底间隔开的垂直沟道，以及形成位于开关装置的相对侧上的存储装置。 存储装置包括圆柱形存储节点，耦合到存储节点的平板电极和形成在存储节点和平板电极之间的介电膜，存储节点电连接到开关装置。

公开(公告)号：US6121659A

公开(公告)日：2000-09-19

申请号：US49488

申请日：1998-03-27

申请人： Todd Alan Christensen ,  John Edward Sheets, II

发明人： Todd Alan Christensen ,  John Edward Sheets, II

IPC分类号： H01L21/84 ,  H01L23/52 ,  H01L27/08 ,  H01L27/12 ,  H01L29/40 ,  H01L29/786 ,  H01L21/01 ,  H01L29/06

CPC分类号： H01L27/1203 ,  H01L21/84

摘要： A semiconductor-on-insulator integrated circuit with buried patterned layers as electrical conductors for discrete device functions, thermal conductors, and/or decoupling capacitors.

摘要翻译： 绝缘体上半导体集成电路，其具有掩埋图案层作为用于分立器件功能的电导体，热导体和/或去耦电容器。

公开(公告)号：US07319258B2

公开(公告)日：2008-01-15

申请号：US10901763

申请日：2004-07-28

申请人： Fu-Liang Yang ,  Yee-Chia Yeo ,  Hung-Wei Chen ,  Tim Tsao ,  Chenming Hu

发明人： Fu-Liang Yang ,  Yee-Chia Yeo ,  Hung-Wei Chen ,  Tim Tsao ,  Chenming Hu

IPC分类号： H01L21/01 ,  H01L21/12

CPC分类号： H01L29/7842 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/7843 ,  H01L29/78654

摘要： A semiconductor-on-insulator device includes a silicon active layer with a crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a crystal direction. Transistors oriented on a direction are formed on the silicon active layer.

摘要翻译： 绝缘体上半导体器件包括布置在绝缘体层上的具有<100>晶体方向的硅有源层。 将绝缘体层放置在具有<110>晶体方向的衬底上。 在硅有源层上形成沿<100>方向取向的晶体管。

公开(公告)号：US06936894B2

公开(公告)日：2005-08-30

申请号：US11013377

申请日：2004-12-17

申请人： Zhongze Wang

发明人： Zhongze Wang

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L29/786 ,  H01L21/01

CPC分类号： H01L29/66772 ,  H01L21/76256 ,  H01L29/78603

摘要： A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the nitridizing, the device wafer is joined with a handle wafer. A method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing an interface of the silicon comprising layer of silicon-on-insulator circuitry with the insulator layer of the silicon-on-insulator circuitry. After the nitridizing, a field effect transistor gate is formed operably proximate the silicon comprising layer. Other methods are disclosed. Integrated circuitry is contemplated regardless of the method of fabrication.

摘要翻译： 形成绝缘体上硅包括集成电路的晶片接合方法包括氮化器件晶片的硅的外表面的至少一部分。 在氮化之后，器件晶片与处理晶片接合。 一种形成绝缘体上硅的方法，包括集成电路包括将包含绝缘体上硅电路的硅层的界面氮化为绝缘体上硅电路的绝缘体层。 在氮化之后，场效应晶体管栅极可靠地形成在包含硅的层上。 公开了其他方法。 无论制造方法如何，都可以考虑集成电路。

公开(公告)号：US06903420B2

公开(公告)日：2005-06-07

申请号：US10749659

申请日：2003-12-30

申请人： Zhongze Wang

发明人： Zhongze Wang

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L29/786 ,  H01L21/01 ,  H01L21/30

CPC分类号： H01L29/66772 ,  H01L21/76256 ,  H01L29/78603

摘要： A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the nitridizing, the device wafer is joined with a handle wafer. A method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing an interface of the silicon comprising layer of silicon-on-insulator circuitry with the insulator layer of the silicon-on-insulator circuitry. After the nitridizing, a field effect transistor gate is formed operably proximate the silicon comprising layer. Other methods are disclosed. Integrated circuitry is contemplated regardless of the method of fabrication.

公开(公告)号：US08163635B2

公开(公告)日：2012-04-24

申请号：US12962035

申请日：2010-12-07

申请人： Michiro Sugitani ,  Genshu Fuse

发明人： Michiro Sugitani ,  Genshu Fuse

IPC分类号： H01L21/01 ,  H01L21/425 ,  H01L21/84

CPC分类号： H01L21/26586 ,  H01L21/26513 ,  H01L21/26526 ,  H01L29/66803

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation.

摘要翻译： 半导体器件的制造方法包括制备作为半导体器件的基底的半导体衬底，并且在半导体衬底的表面上形成有凹凸部。 该方法还包括在半导体衬底的表面上沉积杂质薄膜，该杂质薄膜包含在半导体衬底中成为供体或受体的杂质原子，并从对角上方执行离子注入沉积在凹面上的杂质薄膜 和半导体衬底的凸部。 该方法还包括通过进行离子注入将杂质原子从杂质薄膜的内部重新吸收到凹凸部的内部。

公开(公告)号：US06933569B2

公开(公告)日：2005-08-23

申请号：US10668349

申请日：2003-09-24

申请人： Risho Koh ,  Shigeharu Yamagami ,  Jong-wook Lee ,  Hitoshi Wakabayashi ,  Yukishige Saito ,  Atsushi Ogura ,  Mitsuru Narihiro ,  Kohichi Arai ,  Hisashi Takemura ,  Tohru Mogami ,  Toyoji Yamamoto ,  Yukinori Ochiai

发明人： Risho Koh ,  Shigeharu Yamagami ,  Jong-wook Lee ,  Hitoshi Wakabayashi ,  Yukishige Saito ,  Atsushi Ogura ,  Mitsuru Narihiro ,  Kohichi Arai ,  Hisashi Takemura ,  Tohru Mogami ,  Toyoji Yamamoto ,  Yukinori Ochiai

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/01 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L21/01

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78615 ,  H01L29/78621

摘要： A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.

摘要翻译： 半导体器件包括形成在绝缘体上的半导体层，形成在半导体层上的栅极绝缘膜，形成在栅极绝缘膜上并沿第一方向延伸的栅电极，在两侧的半导体层中形成的源/漏区 所述半导体层中的主体接触区域，其中比所述栅极绝缘膜更厚的场绝缘膜介于所述半导体层和所述栅电极的延伸部分之间的部分隔离区域，以及完全隔离区域 去除绝缘体上的半导体层。 完全隔离区域形成为与平行于源极/漏极区域的第一方向的一侧的至少一部分接触。

公开(公告)号：US06882009B2

公开(公告)日：2005-04-19

申请号：US10230055

申请日：2002-08-29

申请人： Ming-Dou Ker ,  Tang-Kui Tseng ,  Hsin-Chin Jiang ,  Chyh-Yih Chang ,  Jeng-Jie Peng

发明人： Ming-Dou Ker ,  Tang-Kui Tseng ,  Hsin-Chin Jiang ,  Chyh-Yih Chang ,  Jeng-Jie Peng

IPC分类号： H01L21/265 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/07 ,  H01L29/10 ,  H01L21/01 ,  H01L23/62

CPC分类号： H01L27/0277 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/0716 ,  H01L29/1079 ,  H01L29/1087 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.