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13 条记录 (耗时 0.037 秒)

    Method and system for forming fine patterns using hologram
    5.
    发明授权
    Method and system for forming fine patterns using hologram 失效
    使用全息图形成精细图案的方法和系统

    公开(公告)号：US5838468A

    公开(公告)日：1998-11-17

    申请号：US631237

    申请日：1996-04-12

    申请人： Shoko Manako ,  Jun-ichi Fujita ,  Yukinori Ochiai ,  Shinji Matsui

    发明人： Shoko Manako ,  Jun-ichi Fujita ,  Yukinori Ochiai ,  Shinji Matsui

    IPC分类号： G03H5/00 ,  G02B5/32 ,  G02B27/24 ,  G03H1/00

    CPC分类号： G03H5/00 ,  G03H2001/0094

    摘要： The method for forming a fine pattern on a substrate disclosed includes a step of preparing a hologram having a pattern, a step of irradiating material waves (de Broglie waves) such as neutral beams, ion beams and electron beams on the hologram, and a step of imaging the pattern on the substrate with the material waves being interfered by passing through the hologram. The light source has a source that emits a beam having a coherent wave front. Since the fine patterns are formed by utilizing the interference of material waves, the minimum processing precision can be enhanced to the extent of the wavelength of the material wave.

    摘要翻译： 在所公开的基板上形成精细图案的方法包括制备具有图案的全息图的步骤，在全息图上照射材料波（德布罗意波）如中性光束，离子束和电子束的步骤，以及步骤 在材料波被穿过全息图的干扰下对图案进行成像。 光源具有发射具有相干波前的光束的源。 由于通过利用材料波的干扰来形成精细图案，所以可以将最小的加工精度提高到材料波的波长的程度。

    Process for production of nano-graphite structure
    6.
    发明申请
    Process for production of nano-graphite structure 审中-公开
    纳米石墨结构生产工艺

    公开(公告)号：US20050079120A1

    公开(公告)日：2005-04-14

    申请号：US10503660

    申请日：2003-01-31

    申请人： Jun-ichi Fujita ,  Masahiko Ishida ,  Fumiyuki Nihey ,  Yukinori Ochiai

    发明人： Jun-ichi Fujita ,  Masahiko Ishida ,  Fumiyuki Nihey ,  Yukinori Ochiai

    IPC分类号： C01B31/02 ,  C01B31/04

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01P2004/16

    摘要： The present invention provides a process for producing a nano-graphite structure having a desired two-dimensional or three-dimensional shape, which process possesses enough potential for ultra-fine processing to allow free selection of the size, shape, and position for the construction therefor; typically a process in which the nano-graphite structure 4 is produced by such a way where a nano-structure amorphous carbon structure 2 formed on a substrate 1 in advance in the shape of a desired ultra-fine steric configuration by a beam-excited reaction is equipped with catalyst metal atoms such as iron contained therein, and when subjecting the steric structure to a low-temperature heat treatment, the structure is converted into the graphite structure 3 through a catalytic thermal reaction by means of the catalyst metal atoms involved therein, while the shape of steric configuration thereof holds.

    摘要翻译： 本发明提供一种具有所需二维或三维形状的纳米石墨结构的制造方法，该方法具有足够的超细加工潜力，可以自由选择结构的尺寸，形状和位置 为此; 通常是通过以下方式制造纳米石墨结构体4的方法：其中通过束激发反应，预先形成在所需的超细立方体形状的基板1上的纳米结构无定形碳结构2 配有催化剂金属原子如铁中所含的铁，并且当对空间结构进行低温热处理时，通过催化热反应借助于其中涉及的催化剂金属原子将结构转化为石墨结构3， 而其立体形状的形状成立。

    Method for forming photoluminescence layer on a semiconductor layer by ion irradiation
    7.
    发明授权
    Method for forming photoluminescence layer on a semiconductor layer by ion irradiation 失效
    通过离子照射在半导体层上形成光致发光层的方法

    公开(公告)号：US5626921A

    公开(公告)日：1997-05-06

    申请号：US381442

    申请日：1995-01-31

    申请人： Yukinori Ochiai

    发明人： Yukinori Ochiai

    IPC分类号： H01L21/265 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40 ,  C23C14/14 ,  H05H1/00 ,  H05H1/24

    CPC分类号： H01L33/346

    摘要： For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.

    摘要翻译： 为了在半导体层上形成光致发光层，将离子照射到要形成光致发光层的半导体层的表面部分，然后将半导体层浸入含有氢氟酸的溶液中，由此将离子照射 氢氟酸处理部分形成光致发光层。

    Resist and method of forming resist pattern
    8.
    发明授权
    Resist and method of forming resist pattern 失效
    抗蚀剂图案的抗蚀剂和方法

    公开(公告)号：US07514197B2

    公开(公告)日：2009-04-07

    申请号：US10527068

    申请日：2003-09-04

    申请人： Yukinori Ochiai ,  Masahiko Ishida ,  Junichi Fujita ,  Takashi Ogura ,  Junji Momoda ,  Eiji Oshima

    发明人： Yukinori Ochiai ,  Masahiko Ishida ,  Junichi Fujita ,  Takashi Ogura ,  Junji Momoda ,  Eiji Oshima

    IPC分类号： G03C1/73 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/36

    CPC分类号： G03F7/038 ,  Y10S430/108 ,  Y10S430/143 ,  Y10S430/167

    摘要： The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

    摘要翻译： 根据本发明的抗蚀剂包括四氯甲基四甲氧基钙[4]芳烃和三氯甲基四甲氧基钙[4]芳烃中的任一种。 包含这种组分的抗蚀剂可溶于对工作环境恶化的影响较小的溶剂，即乳酸乙酯（EL），丙二醇单甲醚（PGME），丙二醇单甲醚乙酸酯（PGMEA），丙酸乙酯， 乙酸丁酯和2-庚酮。 除了上述溶剂之外，还可以通过四甲基氢氧化铵来显影。 通过电子射线曝光该抗蚀剂，达到8nm的高分辨率，通过使用该抗蚀剂作为掩模，可以将各种材料形成为超精细的形状。 根据这种抗蚀剂，提供了具有高分辨率且可溶于溶剂的光敏抗蚀剂材料，其效果较差，可以使工作环境恶化并且可以通过溶剂显影，使用它的曝光方法和使用它的超精细加工方法 。

    Resist and method of forming resist pattern
    10.
    发明申请
    Resist and method of forming resist pattern 失效

    公开(公告)号：US20060127798A1

    公开(公告)日：2006-06-15

    申请号：US10527068

    申请日：2003-09-04

    申请人： Yukinori Ochiai ,  Masahiko Ishida ,  Junchi Fujita ,  Takashi Ogura ,  Junji Momoda ,  Eiji Oshima

    发明人： Yukinori Ochiai ,  Masahiko Ishida ,  Junchi Fujita ,  Takashi Ogura ,  Junji Momoda ,  Eiji Oshima

    IPC分类号： G03C1/76

    CPC分类号： G03F7/038 ,  Y10S430/108 ,  Y10S430/143 ,  Y10S430/167

    摘要： The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.