Electroless plating bath composition and method of use
    1.
    发明授权
    Electroless plating bath composition and method of use 失效
    化学镀浴组成及使用方法

    公开(公告)号:US07686874B2

    公开(公告)日:2010-03-30

    申请号:US11168675

    申请日:2005-06-28

    IPC分类号: C23C18/34

    CPC分类号: C23C18/1608 C23C18/34

    摘要: An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.

    摘要翻译: 提供了包含琥珀酸,碳酸钾,钴金属离子源,还原剂和水的化学镀组合物。 组合物中也可以包括任选的缓冲剂。 组合物可用于在包括通孔,沟槽和互连的半导体衬底表面中或其上沉积钴金属。

    Electroless plating bath composition and method of use
    2.
    发明授权
    Electroless plating bath composition and method of use 有权
    化学镀浴组成及使用方法

    公开(公告)号:US07875110B2

    公开(公告)日:2011-01-25

    申请号:US12706203

    申请日:2010-02-16

    IPC分类号: C23C18/34 B05D1/18

    CPC分类号: C23C18/1608 C23C18/34

    摘要: An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.

    摘要翻译: 提供了包含琥珀酸,碳酸钾,钴金属离子源,还原剂和水的化学镀组合物。 组合物中也可以包括任选的缓冲剂。 组合物可用于在包括通孔,沟槽和互连的半导体衬底表面中或其上沉积钴金属。

    ELECTROLESS PLATING BATH COMPOSITION AND METHOD OF USE
    3.
    发明申请
    ELECTROLESS PLATING BATH COMPOSITION AND METHOD OF USE 有权
    电沉积浴组合物及其使用方法

    公开(公告)号:US20100144144A1

    公开(公告)日:2010-06-10

    申请号:US12706203

    申请日:2010-02-16

    IPC分类号: H01L21/445

    CPC分类号: C23C18/1608 C23C18/34

    摘要: An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.

    摘要翻译: 提供了包含琥珀酸,碳酸钾,钴金属离子源,还原剂和水的化学镀组合物。 组合物中也可以包括任选的缓冲剂。 组合物可用于在包括通孔,沟槽和互连的半导体衬底表面中或其上沉积钴金属。

    Method and apparatus for use in photochemically oxidizing gaseous
volatile or semi-volatile organic compounds
    5.
    发明授权
    Method and apparatus for use in photochemically oxidizing gaseous volatile or semi-volatile organic compounds 失效
    用于光化学氧化气态挥发性或半挥发性有机化合物的方法和装置

    公开(公告)号:US5707595A

    公开(公告)日:1998-01-13

    申请号:US755443

    申请日:1996-11-22

    摘要: A method of forming a sidewall for a reactor for oxidizing volatile or semi-volatile organic compounds, the sidewall being reactive with gaseous oxidation products produced by the oxidation of the volatile or semi-volatile organic compounds, includes, i) providing a dry mixture of material comprising by weight: from about 23% to 35% cement; from about 30% to 45% added CaO; from about 6% to 20% added Ca(OH).sub.2 ; and from about 10% to 25% added CaSO.sub.4 ; ii) combining the dry mixture of material with water and forming a slurry therefrom; iii) forming the slurry into a desired reactor sidewall shape; and iv) hardening the shaped slurry into a hardened cement reactor sidewall. An apparatus for photochemically oxidizing gaseous volatile or semi-volatile organic compounds includes a reactor vessel comprising sidewalls having at least one baffle. The baffle comprises at least a portion of the respective reaction chamber sidewalls with the baffle itself comprising the dry porous cementitious and chemically sorbent material. The baffle includes a peripheral frame which receives the cementitious material. The frame has a peripheral and inwardly facing channel member having at least two channel walls. The channel walls include at least one projection extending into the cementitious material. A source of ultraviolet light used to produce the oxidation products are U-shaped tubes. A cooling medium used to cool the baffle comprises tubing mounted to a substantially planar substrate.

    摘要翻译: 形成用于氧化挥发性或半挥发性有机化合物的反应器的侧壁的方法,所述侧壁与挥发性或半挥发性有机化合物的氧化产生的气态氧化产物反应,包括:i)提供干燥混合物 重量含量:约23%至35%的水泥; 约30%至45%加入CaO; 约6%至20%加入Ca(OH)2; 和约10%至25%的加入的CaSO 4; ii)将干燥的材料混合物与水混合并从中形成浆料; iii)将浆料形成所需的反应器侧壁形状; 和iv)将成型浆料硬化成硬化的水泥反应器侧壁。 用于光化学氧化气态挥发性或半挥发性有机化合物的装置包括反应容器,其包括具有至少一个挡板的侧壁。 挡板包括相应反应室侧壁的至少一部分,挡板本身包括干多孔水泥质和化学吸附材料。 挡板包括接收胶结材料的周边框架。 框架具有周向且面向内的通道构件,其具有至少两个通道壁。 通道壁包括延伸到水泥质材料中的至少一个突起。 用于生产氧化产物的紫外光源是U形管。 用于冷却挡板的冷却介质包括安装到基本平坦的基板上的管道。