公开(公告)号：US20190067028A1

公开(公告)日：2019-02-28

申请号：US15686526

申请日：2017-08-25

申请人： Andrew L. Li ,  Prashant Raghu ,  Sanjeev Sapra ,  Rita J. Klein ,  Sanh D. Tang ,  Sourabh Dhir

发明人： Andrew L. Li ,  Prashant Raghu ,  Sanjeev Sapra ,  Rita J. Klein ,  Sanh D. Tang ,  Sourabh Dhir

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L27/108 ,  H01L21/66 ,  H01L21/67

摘要： Various embodiments comprise methods of selectively etching oxides over nitrides in a vapor-etch cyclic process. In one embodiment, the method includes, in a first portion of the vapor-etch cyclic process, exposing a substrate having oxide features and nitride features formed thereon to selected etchants in a vapor-phase chamber; transferring the substrate to a post-etch heat treatment chamber; and heating the substrate to remove etchant reaction products from the substrate. In a second portion of the vapor-etch cyclic process, the method continues with transferring the substrate from the post-etch heat treatment chamber to the vapor-phase chamber; exposing the substrate to the selected etchants in the vapor-phase chamber; transferring the substrate to the post-etch heat treatment chamber; and heating the substrate to remove additional etchant reaction products from the substrate. Apparatuses for performing the method and additional methods are also disclosed.

公开(公告)号：US08603318B2

公开(公告)日：2013-12-10

申请号：US13098572

申请日：2011-05-02

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： C25F3/16

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with a surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to a dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更高的纳米颗粒的电解质溶液施加到基底上以相对于介电材料选择性地去除导电金属，而不施加外部电位或处理垫与基底的表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性去除导电金属层（例如，阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连）而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US07935242B2

公开(公告)日：2011-05-03

申请号：US11507291

申请日：2006-08-21

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： C25F3/16

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US07875110B2

公开(公告)日：2011-01-25

申请号：US12706203

申请日：2010-02-16

申请人： Rita J. Klein ,  Adam J. Regner, III

发明人： Rita J. Klein ,  Adam J. Regner, III

IPC分类号： C23C18/34 ,  B05D1/18

CPC分类号： C23C18/1608 ,  C23C18/34

摘要： An electroless plating composition comprising succinic acid, potassium carbonate, a source of cobalt metal ions, a reducing agent, and water is provided. An optional buffering agent may also be included in the composition. The composition may be used to deposit cobalt metal in or on semiconductor substrate surfaces including vias, trenches, and interconnects.

摘要翻译： 提供了包含琥珀酸，碳酸钾，钴金属离子源，还原剂和水的化学镀组合物。 组合物中也可以包括任选的缓冲剂。 组合物可用于在包括通孔，沟槽和互连的半导体衬底表面中或其上沉积钴金属。

公开(公告)号：US07550380B2

公开(公告)日：2009-06-23

申请号：US11668107

申请日：2007-01-29

申请人： Patricia C. Elkins ,  John T. Moore ,  Rita J. Klein

发明人： Patricia C. Elkins ,  John T. Moore ,  Rita J. Klein

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  H01L21/76849 ,  H01L21/76877 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/16

摘要： A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.

摘要翻译： 提供了一种在基于硫族化物的存储器件中在导电互连上形成金属帽的方法，包括：在衬底上形成第一导电材料层，在第一导电材料和衬底上沉积绝缘层，形成 在所述绝缘层中开口以露出所述第一导电材料的至少一部分，在所述绝缘层上并在所述开口内沉积第二导电材料，去除所述第二导电材料的部分以在所述开口内形成导电区域，使所述导电 在所述开口内的所述绝缘层的上表面以下的水平面上，在所述开口内的所述凹入的导电区域上形成第三导电材料的盖，在所述盖上沉积基于硫属元素化物的存储单元材料的堆叠， 导电材料在硫族化物堆上。

公开(公告)号：US07446415B2

公开(公告)日：2008-11-04

申请号：US11075770

申请日：2005-03-09

申请人： Dale W Collins ,  Rita J Klein

发明人： Dale W Collins ,  Rita J Klein

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/288 ,  H01L21/76879

摘要： Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, and semiconductor devices, dies, and systems that incorporate the interconnects and contacts are disclosed. The contact openings are electrically shorted together with a selective material, a nucleation layer is selectively deposited onto the area to be plated (e.g., the base of the opening), and a conductive material is electroless plated onto the nucleation layer to fill the opening. The process achieves substantially simultaneous filling of openings having different surface potentials at an about even rate.

摘要翻译： 公开了无电填充的方法，电气不同的特征，例如形成互连和导电触点的接触开口，以及结合有互连和触点的半导体器件，管芯和系统。 接触开口与选择性材料一起电短路，成核层选择性地沉积到待镀覆的区域（例如，开口的基底）上，并将导电材料无电镀在成核层上以填充开口。 该方法以大致均匀的速率基本上同时填充具有不同表面电位的开口。

公开(公告)号：US07244678B2

公开(公告)日：2007-07-17

申请号：US11081413

申请日：2005-03-16

申请人： Nishant Sinha ,  Rita J. Klein

发明人： Nishant Sinha ,  Rita J. Klein

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/06

摘要： A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a complexing agent.

摘要翻译： 平面化方法包括在包括络合剂的平坦化组合物的存在下提供第二和/或第三排第VIII族含金属表面（优选含铂表面）并将其定位成与抛光表面接触。

公开(公告)号：US06984301B2

公开(公告)日：2006-01-10

申请号：US10199736

申请日：2002-07-18

申请人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

发明人： Dale W. Collins ,  Richard H. Lane ,  Rita J. Klein

IPC分类号： C25D5/02 ,  C25D7/06 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L21/2885 ,  H01L27/10808 ,  H01L27/10817 ,  H01L28/60 ,  H01L28/90 ,  Y10S257/906

摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括电化学处理半导体衬底的方法。 本发明包括电镀物质的方法。 提供了具有限定的第一和第二区域的基板。 第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。 在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。 第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。 在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。 本发明还包括形成电容器结构的方法。

公开(公告)号：US06518198B1

公开(公告)日：2003-02-11

申请号：US09652208

申请日：2000-08-31

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L2131

CPC分类号： H01L21/7687 ,  C23C18/165 ,  C23C18/44 ,  H01L21/288 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.

公开(公告)号：US06440230B1

公开(公告)日：2002-08-27

申请号：US09518560

申请日：2000-03-03

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： C23C836

CPC分类号： H01L21/76849 ,  C23C8/02 ,  H01L21/2885 ,  H01L21/76856 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： Nitride layer formation includes a method where a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.

摘要翻译： 氮化物层形成包括其中材料电沉积在基底上并且至少部分地转化成包含氮和电沉积材料的层的方法。 电沉积可以在基底的导电部分上基本上选择性地发生。 此外，转换可以包括将电沉积材料暴露于含氮等离子体。 氮化铬和氮氧化铬是含氮材料的实例。 集成电路的铜或金布线是基板的例子。 可以使用含氮等离子体将铬转化为含氮化铬的扩散阻挡层。