Chemical trim of photoresist lines by means of a tuned overcoat
    3.
    发明授权
    Chemical trim of photoresist lines by means of a tuned overcoat 有权
    通过调整的外涂层对光致抗蚀剂线进行化学修饰

    公开(公告)号:US08137893B2

    公开(公告)日:2012-03-20

    申请号:US12983297

    申请日:2011-01-01

    IPC分类号: G03F7/00 G03F7/004 G03F7/40

    CPC分类号: G03F7/40 Y10T428/24802

    摘要: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译: 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影,以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    Chemical trim of photoresist lines by means of a tuned overcoat material
    4.
    发明授权
    Chemical trim of photoresist lines by means of a tuned overcoat material 有权
    通过调谐的外涂层材料对光致抗蚀剂线进行化学修饰

    公开(公告)号:US07862982B2

    公开(公告)日:2011-01-04

    申请号:US12137743

    申请日:2008-06-12

    IPC分类号: G03F7/00 G03F7/004 G03F7/40

    CPC分类号: G03F7/40 Y10T428/24802

    摘要: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译: 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat
    6.
    发明申请
    Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat 有权
    通过调整大衣的光刻胶线的化学修剪

    公开(公告)号:US20110129652A1

    公开(公告)日:2011-06-02

    申请号:US12983297

    申请日:2011-01-01

    IPC分类号: B32B3/02 G03F7/20

    CPC分类号: G03F7/40 Y10T428/24802

    摘要: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译: 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影,以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL
    7.
    发明申请
    CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
    通过调谐过滤材料的化学品线的化学研究

    公开(公告)号:US20090311490A1

    公开(公告)日:2009-12-17

    申请号:US12137743

    申请日:2008-06-12

    IPC分类号: B32B3/00 G03F7/20

    CPC分类号: G03F7/40 Y10T428/24802

    摘要: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译: 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽,并且使用该工艺来制造包括nm阶(例如约22nm)的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层,并对平版印刷抗蚀剂层进行图形化和显影,以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层,加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除,从而在基底上产生独立的修整光刻特征。 可选地,重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。