Abstract:
A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.
Abstract:
A method and an analysis unit for analyzing the measured variables of a gas sensor, and a gas sensor which is operated using this method, provides that the fundamental method detects measured variables of a gas sensor, which represent the concentration of the gas to be monitored. Subsequently, two analysis modes are provided in the method, which differ essentially due to the speed and precision of the measured variable analysis. In a first analysis mode, at least one measured variable and/or the difference between two successive measured variables is compared to a threshold value. Depending on the output of the comparison, subsequently a first gas concentration signal is generated or not. The situation is similar in the second analysis mode, an average value calculation of at least two measured variables being carried out here and a second gas concentration signal being generated as a function of the result.