公开(公告)号：US09632104B2

公开(公告)日：2017-04-25

申请号：US13851392

申请日：2013-03-27

Applicant: Robert Bosch GmbH

Inventor： Hubert Benzel ,  Christoph Schelling

IPC: H01L21/78 ,  G01P3/487 ,  G01R33/00

CPC classification number: G01P3/487 ,  G01R33/0052 ,  H01L21/78 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10156 ,  Y10T29/49128

Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.

公开(公告)号：USRE44995E1

公开(公告)日：2014-07-08

申请号：US13855925

申请日：2013-04-03

Applicant: Robert Bosch GmbH

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L21/302 ,  B81C1/00

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

Abstract: A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Abstract translation: 一种制造半导体部件的方法包括在所述半导体部件的p掺杂层中形成n掺杂层，其中所述n掺杂层包括以下中的至少一种：筛状层或网状层。 该方法还包括在n掺杂层的材料之间对p-掺杂层进行腐蚀蚀刻以形成顶部电极，以及在n-掺杂层下方形成空腔。

公开(公告)号：US09926188B2

公开(公告)日：2018-03-27

申请号：US15119917

申请日：2015-02-05

Applicant: Robert Bosch GmbH

Inventor： Johannes Classen ,  Torsten Kramer ,  Hubert Benzel ,  Jens Frey ,  Daniel Christoph Meisel ,  Christoph Schelling

IPC: H01L23/498 ,  B81B7/00 ,  B81C3/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/017 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2201/019 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.

公开(公告)号：US09885626B2

公开(公告)日：2018-02-06

申请号：US14472167

申请日：2014-08-28

Applicant: Timo Benzel ,  Robert Bosch GmbH

Inventor： Frieder Haag ,  Hubert Benzel

IPC: G01L9/00 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  G01L19/14

CPC classification number: G01L9/0052 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2207/092 ,  B81C1/00373 ,  B81C2203/0154 ,  G01L9/0047 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2924/00014

Abstract: A micromechanical sensor system includes a micromechanical sensor chip surrounded at least laterally by a molded housing which has a front side and a rear side. The micromechanical sensor chip includes a chip area on the rear side, which is omitted from the molded housing, and a rewiring device formed on the rear side, which, starting from the chip area, extends to the surrounding molded housing on the rear side, and from there, past at least one via from the rear side to the front side of the molded housing.

公开(公告)号：US09240407B2

公开(公告)日：2016-01-19

申请号：US14049672

申请日：2013-10-09

Applicant: Robert Bosch GmbH

Inventor： Gregor Schuermann ,  Hubert Benzel

IPC: H01L25/00 ,  H01L27/08 ,  H01L27/14 ,  H01L21/00 ,  G01J5/00 ,  H01L29/66 ,  H01L27/146 ,  G01J5/08 ,  H01L21/762 ,  G01J5/02

CPC classification number: H01L27/0814 ,  G01J5/00 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/0853 ,  H01L21/00 ,  H01L21/76229 ,  H01L21/76289 ,  H01L25/00 ,  H01L27/14 ,  H01L27/14649 ,  H01L29/66136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in the substrate. The blocks are separated from one another by respective gaps, and within a specific block, the individual diodes are electrically insulated from one another by first STI trenches situated between them.

Abstract translation: 提供了一种集成二极管阵列和相应的制造方法。 集成二极管阵列包括具有上侧的衬底和多个二极管的块，其以平面方式定位并且悬挂在位于衬底之下的腔下方的衬底上。 这些块通过相应的间隙彼此分开，并且在特定块内，各个二极管通过位于它们之间的第一STI沟槽彼此电绝缘。

公开(公告)号：US20130257420A1

公开(公告)日：2013-10-03

申请号：US13851392

申请日：2013-03-27

Applicant: ROBERT BOSCH GMBH

Inventor： Hubert Benzel ,  Christoph Schelling

IPC: G01P3/487

CPC classification number: G01P3/487 ,  G01R33/0052 ,  H01L21/78 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10156 ,  Y10T29/49128

Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.

Abstract translation: 传感器包括具有传感器表面和倾斜表面的主体。 传感器元件布置在传感器表面上并且被配置为拾取方向测量变量的方向分量。 构造成与传感器元件接触的至少一个接触制作表面布置在倾斜表面上。 倾斜表面相对于传感器的载体材料的格子结构成一角度并且在与传感器表面不同的方向上定向。