公开(公告)号：US20150235859A1

公开(公告)日：2015-08-20

申请号：US14616004

申请日：2015-02-06

Applicant: Robert Bosch GmbH

Inventor： Simon ARMBRUSTER ,  Frank FISCHER ,  Johannes BAADER ,  Rainer STRAUB

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/311 ,  B81C1/00801 ,  B81C2201/014 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for structuring a layered structure, for example, of a micromechanical component, from two semiconductor layers between which an insulating and/or etch stop layer is situated includes forming a first etching mask on a first side of the first semiconductor layer, carrying out a first etching step, starting from a first outer side, for structuring the first semiconductor layer, forming a second etching mask on a second side of the second semiconductor layer, and carrying out a second etching step, starting from the second outer side, for structuring the second semiconductor layer. After carrying out the first etching step and prior to carrying out the second etching step, at least one etching protection material is deposited on at least one trench wall of at least one first trench, which is etched in the first etching step.

Abstract translation: 用于从两个半导体层构成诸如微机械部件的分层结构的绝缘和/或蚀刻停止层的方法包括在第一半导体层的第一侧上形成第一蚀刻掩模，执行 第一蚀刻步骤，从第一外侧开始，用于构造第一半导体层，在第二半导体层的第二侧上形成第二蚀刻掩模，并且执行第二蚀刻步骤，从第二外侧开始，用于 构造第二半导体层。 在执行第一蚀刻步骤之后并且在进行第二蚀刻步骤之前，至少一个蚀刻保护材料沉积在至少一个第一沟槽的至少一个沟槽壁上，该第一沟槽在第一蚀刻步骤中被蚀刻。

公开(公告)号：US20150232328A1

公开(公告)日：2015-08-20

申请号：US14609645

申请日：2015-01-30

Applicant: Robert Bosch GmbH

Inventor： Simon ARMBRUSTER ,  Dietmar Haberer ,  Stefan Pinter ,  Jochen Tomaschko ,  Benjamin Steuer

IPC: B81B7/00 ,  B81C3/00

CPC classification number: B81B7/0067 ,  B81B2201/042 ,  B81C1/00317 ,  B81C3/001 ,  B81C2203/032 ,  G02B26/0833 ,  Y10T29/49789 ,  Y10T29/49799 ,  Y10T29/49885 ,  Y10T29/49888 ,  Y10T29/49947 ,  Y10T428/24331

Abstract: A production method for a wafer equipped with transparent plates includes: formation of a row of through-holes in a wafer; formation of at least one strip-shaped recess in a wafer surface, each of the through-holes of the same row intersecting partly with the respectively associated strip-shaped recess; an uninterrupted groove being formed in each intermediate region between two adjacent through-holes of the same row, the floor surface of the groove being oriented so as to be inclined relative to the wafer surface by an angle of inclination greater than 0° and less than 90°; and covering at least one through-hole with at least one transparent plate made of at least one material transparent to at least a sub-spectrum of electromagnetic radiation.

Abstract translation: 配备有透明板的晶片的制造方法包括：在晶片中形成一排通孔; 在晶片表面中形成至少一个条形凹槽，同一行中的每个通孔与相应的带状凹槽部分相交; 在同一行的两个相邻通孔之间的每个中间区域中形成不间断的凹槽，槽的地板表面被定向成相对于晶片表面倾斜大于0°并且小于 90°; 以及至少一个通孔，该至少一个通孔具有至少一个由至少一个对至少电磁辐射子谱透明的材料制成的透明板。