公开(公告)号：US5804084A

公开(公告)日：1998-09-08

申请号：US729122

申请日：1996-10-11

申请人： Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

发明人： Robert D. Nasby ,  Dale L. Hetherington ,  Jeffry J. Sniegowski ,  Paul J. McWhorter ,  Christopher A. Apblett

IPC分类号： B32B3/04 ,  H01L21/00

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

摘要翻译： 一种在微机械制造过程中消除地形影响的过程。 牺牲氧化物层沉积在含有在元件之间具有蚀刻谷的功能元件的层上，使得牺牲层具有足够的厚度以填充谷并且向上延伸到氧化物层的上表面上的最低点 至少与被覆盖层中的功能元件的顶表面一样高。 然后将牺牲氧化物层抛光并通过化学机械抛光进行平面化。 然后在这个新的平坦化表面上形成另一层功能元件。

公开(公告)号：US4152175A

公开(公告)日：1979-05-01

申请号：US927236

申请日：1978-07-24

申请人： Edward L. Burgess ,  Robert D. Nasby ,  Donald G. Schueler

发明人： Edward L. Burgess ,  Robert D. Nasby ,  Donald G. Schueler

IPC分类号： H01L31/0224 ,  H01L31/052 ,  H01L31/04

CPC分类号： H01L31/052 ,  H01L31/022425 ,  Y02E10/50

摘要： A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

摘要翻译： 一种硅太阳能电池组件，其包括当存在设备和安装件的热膨胀性不匹配时用于结合到金属安装座上的大的薄硅太阳能电池。

公开(公告)号：US6013950A

公开(公告)日：2000-01-11

申请号：US245785

申请日：1994-05-19

申请人： Robert D. Nasby

发明人： Robert D. Nasby

IPC分类号： H01L27/115 ,  H01L29/739 ,  H01L23/40 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L27/11502 ,  H01L29/7391 ,  H01L2924/0002

摘要： A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

摘要翻译： 公开了可以用作存储元件的非破坏性读出型非易失性半导体二极管开关器件。 二极管开关器件由设置在整流结上方的铁电材料形成，以通过残留极化来控制其中的导电特性。 本发明可以用于形成用于存储信息的集成电路存储器。

公开(公告)号：US4773008A

公开(公告)日：1988-09-20

申请号：US882951

申请日：1986-07-07

申请人： Rondon L. Schroeder ,  Bernie R. Goheen ,  Robert D. Nasby

发明人： Rondon L. Schroeder ,  Bernie R. Goheen ,  Robert D. Nasby

IPC分类号： A01K63/06 ,  G05B19/042 ,  G06F15/20

CPC分类号： A01K63/06 ,  G05B19/0426

摘要： Apparatus for controlling the environment of a tank adapted to be filled with water where the tank includes a plurality of control apparatus. The invention specifically utilizes a microprocessor having a plurality of control signal inputs and a plurality of control signal outputs. Apparatus is provided for coupling each of the control signal outputs to each of the plurality of control apparatus. A program device is coupled to the microprocessor signal input such that data can be entered for the control of each of the plurality of control signal outputs and a timing apparatus is likewise coupled to one of the plurality of signal inputs in a manner to allow the microprocessor to calculate the time of day such that data entered by the program device will selectively control the function of each of the control apparatus as necessary to maintain the environment within the limits set by the operator.