公开(公告)号：US4655848A

公开(公告)日：1987-04-07

申请号：US769816

申请日：1985-08-26

Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363 ,  H01L21/38 ,  H01L21/36

CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631 ,  Y10T428/12528

Abstract: A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e.g., of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the HgCdTe layer (15).

Abstract translation: 外延生长到例如GaAs的蓝宝石的结晶载体（10）上的HgCdTe（15）层。 在载体（10）上外延生长1微米至5微米厚度的CdTe衬底（5）。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 在500℃至625℃的生长温度范围内，在绝热的可重复使用的安瓿（17）中将基底（5）和源（3）加热在一起，对于持续时间为5分钟的生长步骤 和4小时。 然后进行相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 在第一生长步骤的实施例中，源（3）和衬底（5）是等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是非等温的。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光HgCdTe层（15）的手段。

公开(公告)号：US4743310A

公开(公告)日：1988-05-10

申请号：US10028

申请日：1987-02-02

Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363

CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/0237 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631 ,  Y10S148/064 ,  Y10T428/12528

Abstract: A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).

Abstract translation: 在晶体载体（10）上外延生长一层HgCdTe（15）。 首先将单晶CdTe衬底（5）外延生长至1微米至5微米的厚度至载体（10）上。 然后，HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 基材（5）和源（3）在绝热的可重复使用的安瓿（17）中在500℃至625℃的生长温度范围内一起加热5分钟至13小时的生长时间 。 在第一生长步骤的实施例中，源（3）和衬底（5）是非等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是等温的。 然后进行可选的相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光最终的HgCdTe层（15）的手段。

公开(公告)号：US4846926A

公开(公告)日：1989-07-11

申请号：US92858

申请日：1987-09-03

Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363

CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/0242 ,  H01L21/02562 ,  H01L21/02631 ,  Y10S438/971

Abstract: A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).

Abstract translation: 在晶体载体（10）上外延生长的一层HgCdTe（15）。 首先将单晶CdTe衬底（5）外延生长至1微米至5微米的厚度至载体（10）上。 然后，HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 基材（5）和源（3）在绝热的可重复使用的安瓿（17）中在500℃至625℃的生长温度范围内一起加热5分钟至13小时的生长时间 。 在第一生长步骤的实施例中，源（3）和衬底（5）是等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是非等温的。 然后进行可选的相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光最终的HgCdTe层（15）的手段。

公开(公告)号：US4648917A

公开(公告)日：1987-03-10

申请号：US769909

申请日：1985-08-26

Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC: C30B23/02 ,  H01L21/363 ,  H01L21/365

CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631

Abstract: A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500.degree. C. and 625.degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e.g., of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15). Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis and bulk CdTe wafer (5) polishing.

Abstract translation: 一层HgCdTe（15）外延生长到CdTe基板（5）上。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 将衬底（5）和源（3）在500℃至625℃的温度范围内加热，以进行持续时间为5分钟至4小时的加工步骤。 在该处理步骤的至少5分钟内，使基板（5）具有比源（3）更大的温度。 优选地，衬底（5）从不比源（3）低的温度。 源（3）和衬底（5）在隔热，可重复使用的安瓿（17）中一起加热。 CdTe衬底（5）优选是外延生长在例如蓝宝石或GaAs的载体（10）上的薄膜。 当不使用支撑体（10）时，对CdTe基板（5）进行抛光; 并且HgCdTe（15）的生长中存在升华和固态扩散生长机制。 公开了用于在HgTe（3）合成和体积CdTe晶片（5）抛光期间防止反应物污染的手段。