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    HgCdTe epitaxially grown on crystalline support
    1.
    发明授权
    HgCdTe epitaxially grown on crystalline support 失效
    外延生长在结晶载体上的HgCdTe

    公开(公告)号：US4655848A

    公开(公告)日：1987-04-07

    申请号：US769816

    申请日：1985-08-26

    Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363 ,  H01L21/38 ,  H01L21/36

    CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631 ,  Y10T428/12528

    Abstract: A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e.g., of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the HgCdTe layer (15).

    Abstract translation: 外延生长到例如GaAs的蓝宝石的结晶载体（10）上的HgCdTe（15）层。 在载体（10）上外延生长1微米至5微米厚度的CdTe衬底（5）。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 在500℃至625℃的生长温度范围内，在绝热的可重复使用的安瓿（17）中将基底（5）和源（3）加热在一起，对于持续时间为5分钟的生长步骤 和4小时。 然后进行相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 在第一生长步骤的实施例中，源（3）和衬底（5）是等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是非等温的。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光HgCdTe层（15）的手段。

    HGCDTE epitaxially grown on crystalline support
    2.
    发明授权
    HGCDTE epitaxially grown on crystalline support 失效
    HGCDTE外延生长在结晶支持

    公开(公告)号：US4743310A

    公开(公告)日：1988-05-10

    申请号：US10028

    申请日：1987-02-02

    Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363

    CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/0237 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631 ,  Y10S148/064 ,  Y10T428/12528

    Abstract: A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).

    Abstract translation: 在晶体载体（10）上外延生长一层HgCdTe（15）。 首先将单晶CdTe衬底（5）外延生长至1微米至5微米的厚度至载体（10）上。 然后，HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 基材（5）和源（3）在绝热的可重复使用的安瓿（17）中在500℃至625℃的生长温度范围内一起加热5分钟至13小时的生长时间 。 在第一生长步骤的实施例中，源（3）和衬底（5）是非等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是等温的。 然后进行可选的相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光最终的HgCdTe层（15）的手段。

    HcCdTe epitaxially grown on crystalline support
    3.
    发明授权
    HcCdTe epitaxially grown on crystalline support 失效
    HcCdTe在晶体支持物上外延生长

    公开(公告)号：US4846926A

    公开(公告)日：1989-07-11

    申请号：US92858

    申请日：1987-09-03

    Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    IPC: C30B25/02 ,  C30B25/22 ,  H01L21/363

    CPC classification number: C30B25/02 ,  C30B25/22 ,  C30B29/48 ,  H01L21/0242 ,  H01L21/02562 ,  H01L21/02631 ,  Y10S438/971

    Abstract: A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).

    Abstract translation: 在晶体载体（10）上外延生长的一层HgCdTe（15）。 首先将单晶CdTe衬底（5）外延生长至1微米至5微米的厚度至载体（10）上。 然后，HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 基材（5）和源（3）在绝热的可重复使用的安瓿（17）中在500℃至625℃的生长温度范围内一起加热5分钟至13小时的生长时间 。 在第一生长步骤的实施例中，源（3）和衬底（5）是等温的。 在第二生长步骤的实施例中，源（3）和衬底（5）是非等温的。 然后进行可选的相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。 公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光最终的HgCdTe层（15）的手段。

    Non isothermal method for epitaxially growing HgCdTe
    4.
    发明授权
    Non isothermal method for epitaxially growing HgCdTe 失效
    HgCdTe外延生长的非等温方法

    公开(公告)号：US4648917A

    公开(公告)日：1987-03-10

    申请号：US769909

    申请日：1985-08-26

    Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

    IPC: C30B23/02 ,  H01L21/363 ,  H01L21/365

    CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631

    Abstract: A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500.degree. C. and 625.degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e.g., of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15). Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis and bulk CdTe wafer (5) polishing.

    Abstract translation: 一层HgCdTe（15）外延生长到CdTe基板（5）上。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 将衬底（5）和源（3）在500℃至625℃的温度范围内加热，以进行持续时间为5分钟至4小时的加工步骤。 在该处理步骤的至少5分钟内，使基板（5）具有比源（3）更大的温度。 优选地，衬底（5）从不比源（3）低的温度。 源（3）和衬底（5）在隔热，可重复使用的安瓿（17）中一起加热。 CdTe衬底（5）优选是外延生长在例如蓝宝石或GaAs的载体（10）上的薄膜。 当不使用支撑体（10）时，对CdTe基板（5）进行抛光; 并且HgCdTe（15）的生长中存在升华和固态扩散生长机制。 公开了用于在HgTe（3）合成和体积CdTe晶片（5）抛光期间防止反应物污染的手段。

    Synthesis and use of ZSM-12
    5.
    发明申请
    Synthesis and use of ZSM-12 审中-公开
    ZSM-12的合成与应用

    公开(公告)号：US20110034749A1

    公开(公告)日：2011-02-10

    申请号：US12850060

    申请日：2010-08-04

    Applicant: Wenyih Frank Lai ,  Jeffrey T. Elks ,  Robert E. Kay

    Inventor： Wenyih Frank Lai ,  Jeffrey T. Elks ,  Robert E. Kay

    IPC: C07C15/08 ,  C01B39/04 ,  C01B39/42

    CPC classification number: B01J29/7034 ,  C01B39/42 ,  C07C6/126 ,  C07C2529/70 ,  C10G45/64 ,  C10G2300/1096 ,  C10G2400/30 ,  Y02P20/52 ,  C07C15/08

    Abstract: A process is described for synthesizing a porous, crystalline material having the framework structure of ZSM-12 of the formula: (n)YO2:X2O3 wherein X is a trivalent element, Y is a tetravalent element and n is between about 80 and about 250. In the process, a mixture capable of forming said material is prepared comprising sources of alkali or alkaline earth metal (M), an oxide of trivalent element (X), an oxide of tetravalent element (Y), hydroxyl ions (OFF), water and tetraethylammonium cations (R), wherein said mixture has a composition, in terms of mole ratios, within the following ranges: YO2/X2O3=100 to 300; H2O/YO2=5 to 15; OH−/YO2=0.10 to 0.30; M/YO2=0.05 to 0.30; and R/YO2=0.10 to 0.20. The mixture is reacted at a temperature of at least about 300° F. (149° C.) for a time of less than about 50 hours to form crystals of the crystalline material and the crystalline material is then recovered.

    Abstract translation: 描述了一种用于合成具有下式的ZSM-12的骨架结构的多孔结晶材料的方法：（n）YO 2：X 2 O 3其中X是三价元素，Y是四价元素，n在约80和约250之间 在该方法中，制备能够形成所述材料的混合物，其包含碱金属或碱土金属（M），三价元素（X）的氧化物，四价元素（Y）的氧化物，羟基离子（OFF）， 水和四乙基铵阳离子（R），其中所述混合物的摩尔比为组成，在以下范围内：YO 2 / X 2 O 3 = 100至300; H2O / YO2 = 5〜15; OH- / YO 2 = 0.10〜0.30; M / YO2 = 0.05〜0.30; R / YO2 = 0.10〜0.20。 混合物在至少约300°F（149℃）的温度下反应约少于约50小时，形成晶体，然后回收结晶物质。

    Composition control of CSVPE HgCdTe
    7.
    发明授权
    Composition control of CSVPE HgCdTe 失效
    CSVPE HgCdTe的组成控制

    公开(公告)号：US4447470A

    公开(公告)日：1984-05-08

    申请号：US447082

    申请日：1982-12-06

    Applicant: Robert E. Kay

    Inventor： Robert E. Kay

    IPC: H01L21/363 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/00

    CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02631 ,  H01L31/02966

    Abstract: Methods for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface. At least 90% of the transition between the CdTe substrate (5) and the grown HgCdTe layer (15) occurs within the first 20% of the HgCdTe layer (15); for distances greater than this away from the substrate (5), the HgCdTe (15) exhibits a substantially uniform x.

    Abstract translation: 使用HgTe源（3）和紧密间隔的气相外延（CSVPE）在CdTe衬底（5）上生长HgCdTe（15）的方法。 在大约1/4至4小时之间的处理时间t内采用520℃至625℃之间的加工温度T. 生长的HgCdTe（15）的厚度A是处理时间t的线性函数。 HgCdTe（15）中镉的摩尔分数x是温度T的线性函数，以及源（3）中汞的摩尔分数y的指数函数。 源（3）中汞的相对量越低，最终产品（15）中汞的相对量越大，反之亦然。 可以使用CdTe基板（5）的任何晶面和任何轴向取向，而不影响HgCdTe（15）的生长速率，HgCdTe（15）的单晶性质或其表面的镜面光洁度 。 CdTe衬底（5）和生长的HgCdTe层（15）之间的至少90％的转变发生在HgCdTe层（15）的前20％内; 对于远离衬底（5）的距离，HgCdTe（15）表现出基本均匀的x。

    Synthesis of high activity ZSM-48
    10.
    发明申请
    Synthesis of high activity ZSM-48 有权
    高活性ZSM-48的合成

    公开(公告)号：US20090076317A1

    公开(公告)日：2009-03-19

    申请号：US11901490

    申请日：2007-09-18

    Applicant: Wenyih Frank Lai ,  Wieslaw J. Roth ,  Robert E. Kay ,  Christine N. Elia

    Inventor： Wenyih Frank Lai ,  Wieslaw J. Roth ,  Robert E. Kay ,  Christine N. Elia

    IPC: C01B33/26 ,  C07C7/00

    CPC classification number: C01B39/48 ,  B01J29/703 ,  B01J29/7461 ,  B01J35/0066 ,  B01J37/0009 ,  B01J2229/20 ,  B01J2229/42 ,  C10G45/64 ,  C10G2300/1022

    Abstract: A process for producing ZSM-48 comprises crystallizing an aqueous reaction mixture comprising at least one source of silica, at least one source of alumina, at least one source of hydroxyl ions, at least one source of diquaternary alkylammonium, R2+, ions having the formula: (CH3)3N+(CH2)5N+(CH3)3 and optionally ZSM-48 seed crystals, wherein said reaction mixture has a composition including the following molar ratios: R2+:SiO2less than 0.1 SiO2:Al2O3less than 100 OH−:SiO2less than 0.2.

    Abstract translation: 一种生产ZSM-48的方法包括使包含至少一种二氧化硅源，至少一种氧化铝源，至少一种羟基离子源，至少一种二季烷基铵R2 +的源，R2 +，具有式 （“CH3”）3N +（CH2）5N +（CH3）3 <？in-line-formula description =“In-line formula”end =“lead” 末端=“尾”→和任选的ZSM-48晶种，其中所述反应混合物具有包括以下摩尔比的组成：

    entry /> <条目>小于0.1 SiO2：Al2O3 小于100 OH-：SiO2 小于0.2

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