公开(公告)号：US07919834B2

公开(公告)日：2011-04-05

申请号：US11949986

申请日：2007-12-04

申请人： Robert Edgar Davis ,  Robert Daniel Edwards ,  J. Edwin Hostetter, Jr. ,  Ping-Chuan Wang ,  Kimball M. Watson

发明人： Robert Edgar Davis ,  Robert Daniel Edwards ,  J. Edwin Hostetter, Jr. ,  Ping-Chuan Wang ,  Kimball M. Watson

IPC分类号： H01L29/40 ,  H01L23/04

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/76852 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L24/28 ,  H01L24/94 ,  H01L2221/68331 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2224/05552

摘要： One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.

摘要翻译： 在硅通孔（TSV）上形成一个或多个多层背面冶金（BSM）堆叠结构。 多层金属可以包括在半导体晶片背面上的铬的粘合层，铜的导电层，镍的扩散阻挡层和诸如金的诺贝尔金属层。 为了防止切割后铜的边缘侵蚀，形成镍层以密封铜边缘。 为了防止切割后镍层的边缘侵蚀，形成金层以密封铜层和镍层。

公开(公告)号：US20090140395A1

公开(公告)日：2009-06-04

申请号：US11949986

申请日：2007-12-04

申请人： Robert Edgar Davis ,  Robert Daniel Edwards ,  J. Edwin Hostetter, JR. ,  Ping-Chuan Wang ,  Kimball M. Watson

发明人： Robert Edgar Davis ,  Robert Daniel Edwards ,  J. Edwin Hostetter, JR. ,  Ping-Chuan Wang ,  Kimball M. Watson

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/76852 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L24/28 ,  H01L24/94 ,  H01L2221/68331 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2224/05552

摘要： One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.

摘要翻译： 在硅通孔（TSV）上形成一个或多个多层背面冶金（BSM）堆叠结构。 多层金属可以包括在半导体晶片背面上的铬的粘合层，铜的导电层，镍的扩散阻挡层和诸如金的诺贝尔金属层。 为了防止切割后铜的边缘侵蚀，形成镍层以密封铜边缘。 为了防止切割后镍层的边缘侵蚀，形成金层以密封铜层和镍层。