专利检索 ap:("Robert Falster" OR "Vladimir Voronkov" OR "Galina Voronkova" OR "Anna Batunina") AND inv:"Galina Voronkova" 第 1 页

1.

发明申请
High resistivity silicon structure and a process for the preparation thereof 有权

公开(公告)号：US20060263967A1

公开(公告)日：2006-11-23

申请号：US11436688

申请日：2006-05-18

申请人： Robert Falster , Vladimir Voronkov , Galina Voronkova , Anna Batunina

发明人： Robert Falster , Vladimir Voronkov , Galina Voronkova , Anna Batunina

IPC分类号： H01L21/8238

CPC分类号： H01L21/324 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3225

摘要： The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate thereof, wherein the resistivity of the substrate wafer is decoupled from the concentration of acceptor atoms (e.g., boron) therein, the resistivity of the substrate being substantially greater than the resistivity as calculated based on the concentration of said acceptor atoms therein.