公开(公告)号：US07112536B2

公开(公告)日：2006-09-26

申请号：US10349081

申请日：2003-01-23

申请人： Robert J. Markunas ,  Gaius G. Fountain ,  Robert C. Hendry

发明人： Robert J. Markunas ,  Gaius G. Fountain ,  Robert C. Hendry

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and based thereon produce a plasma in the plasma chamber. The window can be shaped and dimensioned to control an amount of power capacitively coupled to the plasma chamber by means of the electric field so that the amount of capacitively coupled power is selected in a range from zero to a predetermined amount. Also, a tuned antenna strap having r.f. power applied thereto to produce a standing wave therein can be arranged adjacent the window to couple magnetic field from a current maximum formed in the strap to the interior of the chamber. A desired amount of magnetic field and/or electric field coupling can be produced by arrangement of the chamber window adjacent that portion of the antenna strap exhibiting the desired current/voltage relationship. The system may be formed in a line source configuration, or in a cylindrical source configuration. The window may have slots and/or apertures, the size and shape of which may be variable.

公开(公告)号：US06558504B1

公开(公告)日：2003-05-06

申请号：US09466128

申请日：1999-12-21

申请人： Robert J. Markunas ,  Gaius G. Fountain ,  Robert C. Hendry

发明人： Robert J. Markunas ,  Gaius G. Fountain ,  Robert C. Hendry

IPC分类号： C23F102

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and based thereon produce a plasma in the plasma chamber. The window can be shaped and dimensioned to control an amount of power capacitively coupled to the plasma chamber by means of the electric field so that the amount of capacitively coupled power is selected in a range from zero to a predetermined amount. Also, a tuned antenna strap having r.f. power applied thereto to produce a standing wave therein can be arranged adjacent the window to couple magnetic field from a current maximum formed in the strap to the interior of the chamber. A desired amount of magnetic field and/or electric field coupling can be produced by arrangement of the chamber window adjacent that portion of the antenna strap exhibiting the desired current/voltage relationship. The system may be formed in a line source configuration, or in a cylindrical source configuration. The window may have slots and/or apertures, the size and shape of which may be variable.

摘要翻译： 一种等离子体处理系统和方法，其中电源产生磁场和电场，并且设置在电源和等离子体室内部之间的窗口将磁场耦合到等离子体室中，从而将功率感应地耦合到室中 并基于此在等离子体室中产生等离子体。 窗口的形状和尺寸可以通过电场来控制电容耦合到等离子体室的功率量，使得在0到预定量的范围内选择电容耦合功率的量。 另外，具有r.f.的调谐天线带。 施加到其上以在其中产生驻波的功率可以布置在窗口附近，以将来自形成在带中的电流最大值的磁场耦合到腔室的内部。 可以通过布置邻近显示期望的电流/电压关系的天线带的该部分的室窗口来产生所需量的磁场和/或电场耦合。 该系统可以形成为线源配置或圆柱形源配置。 窗口可以具有槽和/或孔，其尺寸和形状可以是可变的。

公开(公告)号：US5168330A

公开(公告)日：1992-12-01

申请号：US620574

申请日：1990-12-03

申请人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

发明人： Daniel J. Vitkavage ,  Gaius G. Fountain ,  Sunil Hattangady ,  Ronald A. Rudder ,  Robert J. Markunas

IPC分类号： H01L29/10 ,  H01L29/47 ,  H01L29/51 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/1091 ,  H01L29/47 ,  H01L29/475 ,  H01L29/51

摘要： A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material of the interlayer is elastically deformed on the surface of the host material to match the lattice constant of the interlayer material with the lattice constant of the host material; and a further material incompatible with the host material when interfaced directly with the host material, but compatible with the interlayer, provided on the interlayer and thereby interfaced with the host material to perform a predetermined function with respect to the interlayer and the host material. In a preferred embodiment, the host material is a material selected from the group consisting of Ge, GaAs, InSb, InP, group II-V compounds and alloys thereof; the interlayer material is formed of pseudomorphic silicon, having a thickness of approximately 10 .ANG. and the further material is formed of SiO.sub.2 or a conductive material.

摘要翻译： 一种包括具有表面的单晶半导体主体材料的半导体器件; 形成在主体材料的表面上的超薄假晶单晶外延中间层，其中中间层由材料形成，并且具有选择的厚度，使得中间层的材料在主体材料的表面上弹性变形以匹配晶格 中间层材料的常数与主体材料的晶格常数; 以及当与主体材料直接接合但与中间层相容但与中间层相连并且由此与主体材料相接触以相对于中间层和主体材料执行预定功能时与主体材料不相容的另一材料。 在优选的实施方案中，主体材料是选自Ge，GaAs，InSb，InP，II-V族化合物及其合金的材料; 中间层材料由假晶硅形成，厚度约为10，另外的材料由SiO2或导电材料形成。