公开(公告)号：US5217920A

公开(公告)日：1993-06-08

申请号：US900392

申请日：1992-06-18

申请人： Robert J. Mattox ,  Paul R. Proctor ,  Syd R. Wilson

发明人： Robert J. Mattox ,  Paul R. Proctor ,  Syd R. Wilson

IPC分类号： H01L21/306 ,  H01L21/74 ,  H01L21/762 ,  H01L21/763

CPC分类号： H01L21/76202 ,  H01L21/306 ,  H01L21/743 ,  H01L21/763 ,  Y10S148/05 ,  Y10S148/117

摘要： A method of fabricating a semiconductor structure includes providing a substrate having at least one layer formed thereon. At least two trenches are formed through the layer and into the substrate wherein at least one trench is for isolation and at least one trench is for making contact to the substrate. After a trench liner is formed on the sidewalls of the trenches, the trenches are filled with doped semiconductor material. The doped semiconductor material in the trench for isolation is then anodized. After the anodization, the anodized trench fill material is oxidized.

摘要翻译： 制造半导体结构的方法包括提供其上形成有至少一层的基板。 至少两个沟槽通过层形成并进入衬底，其中至少一个沟槽用于隔离，并且至少一个沟槽用于与衬底接触。 在沟槽的侧壁上形成沟槽衬垫之后，用掺杂的半导体材料填充沟槽。 然后将用于隔离的沟槽中的掺杂半导体材料进行阳极氧化。 阳极氧化后，阳极氧化的沟槽填充材料被氧化。