公开(公告)号：US5153307A

公开(公告)日：1992-10-06

申请号：US738656

申请日：1991-07-31

申请人： Robert T. Gleason ,  Harold G. Linde

发明人： Robert T. Gleason ,  Harold G. Linde

IPC分类号： C08G73/10

CPC分类号： C08G73/1007

摘要： Solutions of polyamide alkyl esters are stabilized by incorporation of a select acidic compound, which inhibits premature imidization of the ester.

摘要翻译： 聚酰胺烷基酯的溶液通过引入抑制酯过早酰亚胺化的选择酸性化合物来稳定。

公开(公告)号：US4430153A

公开(公告)日：1984-02-07

申请号：US509516

申请日：1983-06-30

申请人： Robert T. Gleason ,  Harold G. Linde

发明人： Robert T. Gleason ,  Harold G. Linde

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/306 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/3121 ,  H01L21/31138

摘要： A method of forming an etch barrier in the reactive ion etching of an aromatic polyamic acid/imide which comprises:coating a surface with a layer of an aromatic polyamic acid;at least partially curing the layer of aromatic polyamic acid to the corresponding aromatic polyimide;in situ converting the surface layer of the aromatic polyimide to a silicon containing alkyl polyamide/imide;applying, exposing, and developing a layer of photoresist over the silicon containing alkyl polyamide/imide to selectively expose a portion of the silicon containing alkyl polyamide/imide surface layer;reactive ion etching the exposed portion of the surface layer of the silicon containing alkyl polyamide/imide with carbon tetrafluoride to remove the exposed portion of the silicon containing alkyl polyamide/imide surface layer;reactive ion etching the resultant structure with an oxygen agent to etch an interconnect in the aromatic polyimide while removing the photoresist down to the silicon containing alkyl polyamide/imide surface layer; andreacting the silicon containing alkyl polyamide/imide surface layer exposed upon removal of the photoresist by the oxygen reactive ion etching to thereby convert the same to a silicon dioxide etch barrier.

摘要翻译： 在芳族聚酰胺酸/酰亚胺的反应离子蚀刻中形成蚀刻阻挡层的方法，其包括：用一层芳族聚酰胺酸涂覆表面; 至少部分地将芳族聚酰胺酸层固化成相应的芳族聚酰亚胺; 将芳族聚酰亚胺的表面层原位转化为含硅烷基聚酰胺/酰亚胺; 在含硅烷基聚酰胺/酰亚胺上施加，曝光和显影一层光致抗蚀剂以选择性地暴露部分含硅烷基聚酰胺/酰亚胺表面层; 反应离子用四氟化碳蚀刻含硅烷基聚酰胺/酰亚胺的表面层的暴露部分，以除去含硅烷基聚酰胺/酰亚胺表面层的暴露部分; 反应离子用氧剂蚀刻所得结构，以蚀刻芳族聚酰亚胺中的互连，同时将光致抗蚀剂除去至含硅烷基聚酰胺/酰亚胺表面层; 以及通过氧反应离子蚀刻使除去了光致抗蚀剂后的含硅烷基聚酰胺/酰亚胺表面层反应，从而将其转化为二氧化硅蚀刻屏障。