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32 条记录 (耗时 0.022 秒)

    Polyimide and a semiconductor prepared therefrom
    3.
    发明授权
    Polyimide and a semiconductor prepared therefrom 失效
    聚酰亚胺和由其制备的半导体

    公开(公告)号：US5539080A

    公开(公告)日：1996-07-23

    申请号：US424986

    申请日：1995-04-19

    申请人： Dennis P. Hogan ,  Harold G. Linde ,  Ronald A. Warren

    发明人： Dennis P. Hogan ,  Harold G. Linde ,  Ronald A. Warren

    IPC分类号： C08G73/10 ,  C08K5/3437 ,  C08L77/00 ,  C08L79/08 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/091 ,  Y10S428/901 ,  Y10S430/11 ,  Y10T428/24917 ,  Y10T428/31692 ,  Y10T428/31721

    摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.

    摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。

    Method for removal of cured polyimide and other polymers
    7.
    发明授权
    Method for removal of cured polyimide and other polymers 失效
    去除聚酰亚胺和其他聚合物的方法

    公开(公告)号：US06319884B2

    公开(公告)日：2001-11-20

    申请号：US09098094

    申请日：1998-06-16

    申请人： Marilyn R. Leduc ,  Harold G. Linde ,  Gary P. Viens

    发明人： Marilyn R. Leduc ,  Harold G. Linde ,  Gary P. Viens

    IPC分类号： C11D330

    CPC分类号： C11D7/5013 ,  C11D7/32 ,  C11D11/0047

    摘要： Non-aqueous cleaning compositions capable of removing cured polyimides and other polymers from a metal circuitry containing substrate such as a semiconductor device for rework and other purposes without any significant adverse affect on the circuitry are provided consisting essentially of alkanolamines, preferably monoethanolamine or monoethanolamine-diethanolamine mixtures and optionally with a solvent such as NMP in an amount less than about 50% by weight. A method is also provided for removing polyimide coatings and other polymers from semiconductor devices using the cleaning compositions of the invention.

    摘要翻译： 提供了能够从含金属回路的底物例如用于返工和其它目的的半导体器件去除固化的聚酰亚胺和其它聚合物的非水清洁组合物，而对电路没有任何显着的不利影响，主要由链烷醇胺，优选单乙醇胺或单乙醇胺 - 二乙醇胺 混合物和任选地以少于约50重量％的量的溶剂如NMP。 还提供了使用本发明的清洁组合物从半导体器件中除去聚酰亚胺涂层和其它聚合物的方法。

    Methods and compositions for the selective etching of silicon
    8.
    发明授权
    Methods and compositions for the selective etching of silicon 失效
    用于选择性蚀刻硅的方法和组合物

    公开(公告)号：US5431777A

    公开(公告)日：1995-07-11

    申请号：US947645

    申请日：1992-09-17

    申请人： Larry W. Austin ,  Harold G. Linde ,  James S. Nakos

    发明人： Larry W. Austin ,  Harold G. Linde ,  James S. Nakos

    IPC分类号： C09K13/06 ,  H01L21/306 ,  H01L21/308 ,  H01L21/00

    CPC分类号： H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  Y10S438/924

    摘要： Methods and compositions for the selective etching of silicon in the presence of p-doped silicon are disclosed whereby a portion of a silicon surface may be dissolved while a p-doped pattern in the surface remains substantially undissolved. The compositions comprise (a) an aqueous solution of an alkali metal hydroxide or a tetraalkylammonium hydroxide; and (b) a high flash point alcohol, phenol, polymeric alcohol, or polymeric phenol.

    摘要翻译： 公开了在存在p掺杂硅的情况下选择性蚀刻硅的方法和组合物，其中一部分硅表面可以溶解，同时表面中的p掺杂图案基本上不溶解。 组合物包含（a）碱金属氢氧化物或四烷基氢氧化铵的水溶液; 和（b）高闪点酒精，苯酚，聚合醇或聚合苯酚。

    Antireflective polyimide dielectric for photolithography
    9.
    发明授权
    Antireflective polyimide dielectric for photolithography 失效
    用于光刻的抗反射聚酰亚胺电介质

    公开(公告)号：US5397684A

    公开(公告)日：1995-03-14

    申请号：US54500

    申请日：1993-04-27

    申请人： Dennis P. Hogan ,  Harold G. Linde ,  Ronald A. Warren

    发明人： Dennis P. Hogan ,  Harold G. Linde ,  Ronald A. Warren

    IPC分类号： C08G73/10 ,  C08K5/3437 ,  C08L77/00 ,  C08L79/08 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/091 ,  Y10S428/901 ,  Y10S430/11 ,  Y10T428/24917 ,  Y10T428/31692 ,  Y10T428/31721

    摘要： A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.

    摘要翻译： 公开了一种用于通过光刻制造电路元件的方法，包括在衬底上沉积抗反射聚酰亚胺或聚酰亚胺前体层并在200℃至500℃下加热衬底以提供包括抗反射聚酰亚胺层的功能集成电路元件。 抗反射聚酰亚胺层含有足够浓度的至少一种发色团，以产生足够的吸光度，以减弱405或436nm处的光化辐射。 优选的发色团包括由苝，萘和蒽醌衍生的那些。 发色团可以存在于作为聚酰亚胺涂料混合物的组分的染料中，或者可以存在于聚酰亚胺本身中的残余物中。