公开(公告)号：US08569891B1

公开(公告)日：2013-10-29

申请号：US12724491

申请日：2010-03-16

申请人： Roberto Somaschini ,  Alessandro Vaccaro ,  Paolo Tessariol ,  Giulio Albini

发明人： Roberto Somaschini ,  Alessandro Vaccaro ,  Paolo Tessariol ,  Giulio Albini

IPC分类号： G11C11/24

CPC分类号： H01L21/76807 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1052 ,  H01L27/11521 ,  H01L2924/0002 ,  H01L2924/00

摘要： Array contacts for semiconductor memories may be formed using a first set of parallel stripe masks and subsequently a second set of parallel stripe masks transverse to the first set. For example, one set of masks may be utilized to etch a dielectric layer, to form parallel spaced trenches. Then the trenches may be filled with a sacrificial material. That sacrificial material may then be masked transversely to its length and etched, for example. The resulting openings may be filled with a metal to form array contacts.