公开(公告)号：US4443488A

公开(公告)日：1984-04-17

申请号：US312712

申请日：1981-10-19

申请人： Roger G. Little ,  Robert G. Wolfson ,  Stanley J. Solomon

发明人： Roger G. Little ,  Robert G. Wolfson ,  Stanley J. Solomon

IPC分类号： C23C16/503 ,  C30B25/10 ,  H01L21/205 ,  B05D3/06

CPC分类号： C23C16/503 ,  C30B25/105 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262

摘要： A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.

摘要翻译： 直接在低成本非晶衬底上的大颗粒，薄半导体膜的等离子体离子沉积工艺，其包括通过电子支撑的大体积，低压，高温等离子体在腔室中电离半导体基气态化合物。 从化合物中提取半导体离子并沉积在基底上。 优选地，沉积首先以缓慢的沉积速率进行，随后是更高的沉积速率。 允许沉积的离子聚结成晶格簇，通过进一步沉积将簇生长成基底上的大颗粒，薄的半导体膜。 优选地，基于半导体的气态化合物包括具有掺杂剂原子源气体的硅烷气体。