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    Nanophotovoltaic devices
    1.
    发明授权
    Nanophotovoltaic devices 有权
    纳米光伏器件

    公开(公告)号：US08242009B2

    公开(公告)日：2012-08-14

    申请号：US13152977

    申请日：2011-06-03

    申请人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    发明人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    IPC分类号： H01L21/44

    CPC分类号： H01L31/07 ,  B82Y30/00 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50

    摘要： The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

    摘要翻译： 本发明提供尺寸在约50nm至约5微米范围内的纳米光伏器件及其制造方法。 在一些实施例中，纳米光伏器件包括夹在两个金属层之间的例如由硅形成的半导体芯，其中一个与半导体芯形成肖特基势垒结，另一个与其形成欧姆接触。 在另一个实施例中，纳米光伏器件包括半导体芯，该半导体芯包括夹在与芯之间形成欧姆接触的两个金属层之间的p-n结。

    Nanophotovoltaic devices
    2.
    发明授权
    Nanophotovoltaic devices 有权
    纳米光伏器件

    公开(公告)号：US07772612B2

    公开(公告)日：2010-08-10

    申请号：US12388895

    申请日：2009-02-19

    申请人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    发明人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    IPC分类号： H01L29/78

    CPC分类号： H01L31/07 ,  B82Y30/00 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50

    摘要： The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

    摘要翻译： 本发明提供尺寸在约50nm至约5微米范围内的纳米光伏器件及其制造方法。 在一些实施例中，纳米光伏器件包括夹在两个金属层之间的例如由硅形成的半导体芯，其中一个与半导体芯形成肖特基势垒结，另一个与其形成欧姆接触。 在另一个实施例中，纳米光伏器件包括半导体芯，该半导体芯包括夹在与芯之间形成欧姆接触的两个金属层之间的p-n结。

    Nanophotovoltaic devices
    3.
    发明授权
    Nanophotovoltaic devices 失效
    纳米光伏器件

    公开(公告)号：US07514725B2

    公开(公告)日：2009-04-07

    申请号：US11002850

    申请日：2004-11-30

    申请人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    发明人： Steven J. Wojtczuk ,  James G. Moe ,  Roger G. Little

    IPC分类号： H01L29/78

    CPC分类号： H01L31/07 ,  B82Y30/00 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50

    摘要： The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.

    摘要翻译： 本发明提供尺寸在约50nm至约5微米范围内的纳米光伏器件及其制造方法。 在一些实施例中，纳米光伏器件包括夹在两个金属层之间的例如由硅形成的半导体芯，其中一个与半导体芯形成肖特基势垒结，另一个与其形成欧姆接触。 在另一个实施例中，纳米光伏器件包括半导体芯，该半导体芯包括夹在与芯之间形成欧姆接触的两个金属层之间的p-n结。

    Methods of treating spherical surfaces
    10.
    发明授权
    Methods of treating spherical surfaces 失效
    处理球面的方法

    公开(公告)号：US5098483A

    公开(公告)日：1992-03-24

    申请号：US403293

    申请日：1989-09-05

    申请人： Roger G. Little ,  Piran Sioshansi ,  Richard W. Oliver

    发明人： Roger G. Little ,  Piran Sioshansi ,  Richard W. Oliver

    IPC分类号： C23C14/50 ,  C23C16/458

    CPC分类号： C23C14/505 ,  C23C16/458

    摘要： Improved methods for the treatment of spherical surfaces designed to improve their physical and chemical properties are disclosed. The methods include the provision of a fixture by which a plurality of spherical workpieces are presented to a treatment source in a way that their entire respective spherical surfaces are uniformly treated and to a uniform predetermined depth. The fixture is mounted for motion about two axes normal to each other. The methods include randomization of the motion about one of the two axes of motion by interrupting one of the two motions for a predetermined period of time. The treatment sources include: pulsed electron beam and light sources, plasma sources, reaction chambers for CVD or MOCVD, sputtering, sputter enhanced ion implantation sources and physical vapor deposition in conjunction with an ion beam source.

    摘要翻译： 公开了用于处理设计用于改善其物理和化学性质的球形表面的改进方法。 这些方法包括提供固定装置，通过该固定装置，多个球形工件以其各自的整个球面被均匀地处理并且具有均匀的预定深度的方式呈现给处理源。 固定装置安装成围绕彼此正交的两个轴线运动。 这些方法包括通过在两个运动中的一个中断一段预定的时间段来关于两个运动轴之一运动的随机化。 处理源包括：脉冲电子束和光源，等离子体源，用于CVD或MOCVD的反应室，溅射，溅射增强离子注入源和与离子束源结合的物理气相沉积。