公开(公告)号：US5475246A

公开(公告)日：1995-12-12

申请号：US169290

申请日：1993-12-20

申请人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick

发明人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick

IPC分类号： G02F1/1362 ,  H01L21/768 ,  H01L21/82 ,  H01L23/522 ,  H01L23/525 ,  H01L27/146 ,  H01L27/10 ,  H01L27/15

CPC分类号： H01L27/146 ,  H01L21/76892 ,  H01L23/525 ,  G02F2001/136263 ,  H01L2924/0002

摘要： Repair lines in an imager device include protective layers disposed over steps in the repair lines where the repair lines extend over underlying components in the imager array. The protective layers each include a layer of polyimide to provide protection for the step portions of the conductive repair line from etchants and the like to which the conductive line is exposed during fabrication processes for the imager array. The protective layers are disposed over the steps of a conductive line in a repair crossover region so as to provide a repair area free from the protective material of the protective layers disposed thereon in the repair crossover region where the conductive repair line is disposed in vertical alignment with an underlying address line.

摘要翻译： 成像设备中的修复线包括设置在修复线上的步骤之上的保护层，其中修复线延伸到成像器阵列中的下面的部件上。 保护层各自包括聚酰亚胺层，以便在成像器阵列的制造过程期间为导电线暴露的蚀刻剂等提供对导电修补线的台阶部分的保护。 保护层设置在修复交叉区域中的导电线的台阶上，以便提供修复区域，该修复区域不设置在修复交叉区域中的保护层的保护材料，其中导电修复线设置成垂直对准 与底层地址行。

公开(公告)号：US5552607A

公开(公告)日：1996-09-03

申请号：US493021

申请日：1995-06-21

申请人： Roger S. Salisbury ,  Ching-Yeu Wei ,  Robert F. Kwasnick

发明人： Roger S. Salisbury ,  Ching-Yeu Wei ,  Robert F. Kwasnick

IPC分类号： H01L23/528 ,  H01L27/146 ,  H04N5/30 ,  H01L25/00 ,  H01L27/10 ,  H01L27/13

CPC分类号： H01L27/146 ,  H01L23/528 ,  H01L2924/0002 ,  Y10S257/913

摘要： An imager array data line repair structure for use in high performance imager arrays includes a first and a second plurality of address lines that are disposed in respective layers with an intermediate layer having at least one insulative material disposed therebetween. The imager device further includes at least one integral address line repair segment that is disposed in the same layer as the first address lines and that is electrically isolated from the first address lines; the integral address line repair segment is disposed so as to underlie a repair portion of the second address line, with the intermediate layer disposed therebetween, and has a width substantially the same as the overlying second address line. In initial fabrication, the integral address line repair segment is electrically isolated from the overlying repair segment of the second address line; in the event a repair has been effected, the repair portion of the second address line is electrically coupled to the underlying integral address line repair segment through laser welds.

摘要翻译： 用于高性能成像器阵列的成像器阵列数据线修复结构包括设置在各层中的第一和第二多个地址线，中间层具有设置在其间的至少一个绝缘材料。 成像装置还包括至少一个整体地址线修复段，其被布置在与第一地址线相同的层中，并且与第一地址线电隔离; 整体地址线修复段被设置为位于第二地址线的修复部分的下面，其间设置有中间层，并且具有与覆盖的第二地址线基本相同的宽度。 在初始制造中，整体地址线修复段与第二地址线的上覆修复段电隔离; 在修理已经实现的情况下，第二地址线的修复部分通过激光焊接电连接到下面的整体地址线修复段。

公开(公告)号：US5435608A

公开(公告)日：1995-07-25

申请号：US261592

申请日：1994-06-17

申请人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

发明人： Ching-Yeu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14643 ,  Y10S438/958

摘要： A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

摘要翻译： 具有耦合到光电二极管的薄膜晶体管（TFT）的固态辐射成像器像素，其中光电二极管和TFT各自包括公共介电层，即，跨越像素延伸并具有栅极电介质的单个电介质层 层部分和光电二极管主体钝化部分。 公共介电层包括诸如氮化硅或氧化硅的单片电介质材料。 此外，光电传感器主体的底部电极和栅极电极分别设置在基板的公共表面上并且包括相同的导电材料，导电材料已经在相同的沉积工艺中沉积在像素上。 用于光电二极管的源电极和漏电极和公共接触电极每个包括相同的源极/漏极金属导电材料，导电材料已经以相同的沉积工艺沉积在像素上。

公开(公告)号：US5631473A

公开(公告)日：1997-05-20

申请号：US493020

申请日：1995-06-21

申请人： George E. Possin ,  Robert F. Kwasnick ,  Roger S. Salisbury

发明人： George E. Possin ,  Robert F. Kwasnick ,  Roger S. Salisbury

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L29/786 ,  H01L29/04 ,  H01L31/062

CPC分类号： H01L27/14643

摘要： A solid state array device includes a plurality of pixels with associated respective TFT switching transistors; a plurality of first address lines disposed in a first layer of the array device; a plurality of second conductive address lines disposed in a second layer of the array device, respective ones of said first and second address lines being disposed substantially perpendicular to one another in a matrix arrangement such that respective ones of the second address lines overlie respective ones of the first address lines at respective crossover regions; a TFT gate dielectric layer disposed in a channel region of each of the pixel TFTs and further being disposed over the first address lines; and a crossover region supplemental dielectric layer disposed in respective ones of the crossover regions between the first and second address lines, but disposed so as to not extend over the TFT channel regions.

摘要翻译： 固态阵列器件包括具有相关联的各个TFT开关晶体管的多个像素; 布置在所述阵列器件的第一层中的多个第一地址线; 布置在所述阵列器件的第二层中的多个第二导电地址线，所述第一和第二地址线中的相应的第一和第二地址线以矩阵布置为基本上彼此垂直地布置，使得第二地址线中的相应的第二地址线覆盖在 相应交叉区域的第一地址线; 设置在每个像素TFT的沟道区中并进一步设置在第一地址线上的TFT栅介质层; 以及布置在第一和第二地址线之间的交叉区域中的相应的交叉区域中的交叉区域补充电介质层，但是设置成不在TFT沟道区域上延伸。

公开(公告)号：US5480810A

公开(公告)日：1996-01-02

申请号：US384093

申请日：1995-02-06

申请人： Ching-Yu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

发明人： Ching-Yu Wei ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  Brian W. Giambattista

IPC分类号： H01L27/146 ,  H01L21/84 ,  H01L21/31

CPC分类号： H01L27/14643 ,  Y10S438/958

摘要： A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.A method of fabricating an imager array includes, for each pixel in the array, the steps of depositing a first conductive layer on a substrate, forming a gate electrode and a photosensor bottom electrode from the first conductive layer, forming a photosensor body disposed on at least a portion of the photosensor bottom electrode, depositing a common dielectric layer over the gate electrode and over the photosensor body and exposed portion of the photosensor bottom electrode, and completing fabrication of the pixel TFT and the photosensor such that the TFT is electrically coupled to the respective photosensor. The portion of the common dielectric layer disposed over the gate electrode comprises the gate dielectric layer and the portion disposed over the photosensor body comprises the photosensor passivation layer.

摘要翻译： 具有耦合到光电二极管的薄膜晶体管（TFT）的固态辐射成像器像素，其中光电二极管和TFT各自包括公共介电层，即，跨越像素延伸并具有栅极电介质的单个电介质层 层部分和光电二极管主体钝化部分。 公共介电层包括诸如氮化硅或氧化硅的单片电介质材料。 此外，光电传感器主体的底部电极和栅极电极分别设置在基板的公共表面上并且包括相同的导电材料，导电材料已经在相同的沉积工艺中沉积在像素上。 用于光电二极管的源电极和漏电极和公共接触电极每个包括相同的源极/漏极金属导电材料，导电材料已经以相同的沉积工艺沉积在像素上。 制造成像器阵列的方法包括阵列中的每个像素，在第一导电层上沉积第一导电层的步骤，从第一导电层形成栅电极和光电传感器底电极，形成设在其上的光传感器体 光电传感器底部电极的至少一部分，在栅电极上方以及光电传感器主体和光电传感器底部电极的暴露部分之上沉积公共电介质层，并完成像素TFT和光电传感器的制造，使得TFT电耦合到 相应的光电传感器。 设置在栅极电极上的公共电介质层的部分包括栅极电介质层，并且设置在光电传感器主体上的部分包括光电传感器钝化层。

公开(公告)号：US5616524A

公开(公告)日：1997-04-01

申请号：US580094

申请日：1995-12-22

申请人： Ching Y. Wei ,  Jianqiang Liu ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  George E. Possin ,  Douglas Albagli

发明人： Ching Y. Wei ,  Jianqiang Liu ,  Roger S. Salisbury ,  Robert F. Kwasnick ,  George E. Possin ,  Douglas Albagli

IPC分类号： H01L21/66 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L27/146 ,  H01L21/465

CPC分类号： H01L21/76892 ,  Y10T29/49162

摘要： A method of repairing an open circuit defect in a damaged address line in a thin film electronic imager device includes the steps of forming a repair area on the device so as to expose the open-circuit defect in the damaged address line and then depositing a conductive material to form a second conductive component and to coincidentally form a repair shunt in the repair area so as to electrically bridge the defect. The step of forming the repair area includes the steps of ablating dielectric material disposed over the first conductive component in the repair area, and etching the repair area so as to remove dielectric material disposed over the defect in the address line in the repair area such that the surface of the address line conductive material is exposed but is not contaminated by the removal of the overlying dielectric material. A layer of photoresist is deposited over the imager device prior to forming the repair area, such that the photoresist layer is patterned during the ablating step and serves as a mask during the etch step.

摘要翻译： 在薄膜电子成像装置中修复损坏的地址线中的开路缺陷的方法包括以下步骤：在设备上形成修复区域，以暴露损坏的地址线中的开路缺陷，然后沉积导电 材料以形成第二导电部件并且在修复区域中巧合地形成修复分路，从而电连接缺陷。 形成修复区域的步骤包括以下步骤：消除设置在修复区域中的第一导电部件上的介电材料，并蚀刻修复区域，以便去除在修复区域中的地址线上的缺陷上的介电材料，使得 地址线导电材料的表面被暴露，但不会被除去上覆电介质材料污染。 在形成修复区域之前，在成像器装置上沉积一层光致抗蚀剂，使得光刻胶层在烧蚀步骤期间被图案化，并在蚀刻步骤期间用作掩模。

公开(公告)号：US5313319A

公开(公告)日：1994-05-17

申请号：US899976

申请日：1992-06-17

申请人： Roger S. Salisbury

发明人： Roger S. Salisbury

IPC分类号： G02F1/1362 ,  G02F1/133

CPC分类号： G02F1/136204

摘要： An active electrical array wafer includes a substrate on which are disposed a plurality of layers of electrically conductive components, such as sets of address lines (for example scan and data lines) that are electrically insulated from one another by a dielectric material. Static protection capacitors to protect against the discharge of static potential between the layers of electrically conductive components are disposed at selected points on the wafer. A static protection line is disposed so as to cross over scan or data lines extending from the active area of the array towards the edge of the wafer. A dielectric material, such as the dielectric material separating the scan and data lines in the active area of the array, is disposed between the static protection line and the crossing-over address line, thereby forming a capacitor in which the two electrodes are the overlying portions of the respective address line and the static protection line. The capacitance of the static protection capacitor is selected, for example by determining the width of the scan protection line, to cause the static protection capacitor to exhibit electrical breakdown before a static potential causes an electrical breakdown between conductive components in the active portion of the array.

摘要翻译： 有源电阵列晶片包括衬底，在衬底上布置有多层导电部件，例如通过电介质材料彼此电绝缘的地址线（例如扫描线和数据线）组。 静电保护电容器用于防止导电部件层之间的静电电位的放电设置在晶片上的选定点处。 静电保护线被布置成跨越从阵列的有源区延伸到晶片边缘的扫描或数据线。 在静电保护线和交叉地址线之间设置介质材料，例如将阵列的有源区域中的扫描线和数据线分开的电介质材料，形成电容器，其中两个电极是上覆的 各地址线和静电保护线的部分。 选择静电保护电容器的电容，例如通过确定扫描保护线的宽度来选择静电保护电容器在静电势引起阵列的有源部分中的导电部件之间的电击穿之前发生电击穿 。

公开(公告)号：US5303074A

公开(公告)日：1994-04-12

申请号：US47740

申请日：1993-04-15

申请人： Roger S. Salisbury

发明人： Roger S. Salisbury

IPC分类号： G02F1/13 ,  G02F1/1362 ,  H01L27/146 ,  G02F1/133 ,  G09G3/36 ,  H01L29/68

CPC分类号： H01L27/14601 ,  G02F1/1309 ,  G02F2001/136263 ,  G02F2001/13629

摘要： A thin film electronic display device having electrically conductive transmission lines disposed therein has embedded repair lines positioned to be electrically coupleable to the transmission lines internally to the display device so that an open circuit on a transmission line can be bypassed by a repair line electrically coupled to the defective transmission line. A method of repairing a defective transmission line in this electronic display device includes identifying the defective transmission line, electrically isolating the defective portion of the transmission line, and electrically connecting the transmission line to its associated repair line.

摘要翻译： 具有布置在其中的导电传输线的薄膜电子显示装置具有嵌入的修复线，其被定位成在显示装置的内部电连接到传输线，使得传输线上的开路可以通过电耦合到 有缺陷的传输线。 在该电子显示装置中修复有缺陷的传输线的方法包括识别有缺陷的传输线，电隔离传输线的缺陷部分，并将传输线电连接到其相关联的维修线。

公开(公告)号：US5480812A

公开(公告)日：1996-01-02

申请号：US436681

申请日：1995-05-08

申请人： Roger S. Salisbury

发明人： Roger S. Salisbury

IPC分类号： H01L27/146 ,  G02F1/13 ,  H01L21/768 ,  H01L21/82 ,  H01L23/538 ,  H01L31/18 ,  H01L21/26 ,  H01L21/62

CPC分类号： H01L23/5382 ,  H01L21/76892 ,  G02F1/1309 ,  H01L2924/0002

摘要： A method for repairing address lines in a thin film imager device includes the steps of removing non-conductive material from a selected repair area so as to expose an open circuit defect in a first conductive component and portions of the first conductive component adjoining the defect, and then depositing conductive material to form a second conductive component and to coincidentally form a repair shunt in the selected repair area that is disposed in electrical contact with the adjoining exposed portions of the first conductive component so as to electrically bridge the open circuit defect. Removal of the non-conductive material to form the selected repair area is accomplished with an excimer laser, allowing the formation of a selected repair area having desired dimensions and substantially planar surfaces. Following formation of the repair shunt, any conductive material disposed between the repair shunt and the second conductive component is removed to electrically isolate the repair shunt from the second electrically conductive component.

摘要翻译： 一种在薄膜成像装置中修复地址线的方法包括以下步骤：从选定的修复区域去除非导电材料，以暴露第一导电部件中的开路缺陷以及邻接缺陷的第一导电部件的部分， 然后沉积导电材料以形成第二导电部件，并且在所选择的修复区域中巧妙地形成修复分流器，所述修复区域设置成与第一导电部件的邻接的暴露部分电接触，从而电桥接开路缺陷。 通过准分子激光器实现去除非导电材料以形成所选择的修复区域，允许形成具有所需尺寸和基本平坦表面的选定修复区域。 在修复分流器形成之后，去除设置在修复分路器和第二导电部件之间的任何导电材料，以将修理分路与第二导电部件电隔离。