摘要:
This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.
摘要:
An overheat protection circuit has an NPN transistor, a power terminal to which a supply voltage is applied, a transmission path by which the supply voltage is transmitted from the power terminal to the collector of the NPN transistor without passing through a current source, and an output voltage generator that generates an output voltage commensurate with the base-emitter voltage of the NPN transistor.
摘要:
An overheat protection circuit has an NPN transistor, a power terminal to which a supply voltage is applied, a transmission path by which the supply voltage is transmitted from the power terminal to the collector of the NPN transistor without passing through a current source, and an output voltage generator that generates an output voltage commensurate with the base-emitter voltage of the NPN transistor.
摘要:
A semiconductor device has a first chip and a second chip sealed in a single package. The first chip includes a regulator which generates an internal voltage from a supply voltage, a reset circuit which monitors the supply voltage and the internal voltage to generate a reset signal, and a controlled circuit which operates by being supplied with the supply voltage. The second chip includes a controlling circuit which generates a control signal for the controlled circuit by being supplied with the internal voltage. The reset signal is fed to both the controlling circuit and the controlled circuit.
摘要:
This semiconductor device comprises: an n-type semiconductor substrate which is connected to an output terminal; a first p-type well which is formed in the n-type semiconductor substrate; a first n-type semiconductor region which is formed in the first p-type well and is connected to a control terminal; and a potential separation part which is connected between the first p-type well and a ground terminal. The potential separation part sets the first p-type well and the ground terminal to a same potential when the output terminal is held at a higher potential than the ground terminal, and sets the first p-type well and the output terminal to a same potential when the output terminal is held at a lower potential than the ground terminal.
摘要:
A motor driving device of the present invention includes: a driver that receives supply of a power supply voltage to apply a plurality of phase voltages to a motor; a voltage-division phase voltage generation portion that divides each of the phase voltages to generate a plurality of voltage-division phase voltages; a neutral point voltage generation portion that combines and divides the phase voltages to generate a neutral point voltage; a selector that outputs any one of the voltage-division phase voltages as a selection voltage-division phase voltage; a comparator that compares the selection voltage-division phase voltage and the neutral point voltage to generate a comparison signal; and a controller that generates a selection control signal of the selector and an energization control signal of the driver according to the comparison signal.