公开(公告)号：US20180020910A1

公开(公告)日：2018-01-25

申请号：US15547555

申请日：2016-01-22

Applicant: Rohm Co., Ltd.

Inventor： Toshihisa MAEDA ,  Masahide Tanaka

IPC: A61B3/028 ,  A61B5/11 ,  A61B3/00

CPC classification number: A61B3/028 ,  A61B3/0041 ,  A61B5/11 ,  A61B2562/0219

Abstract: A portable visual acuity examination device comprises a mounting unit that can be mounted in front of eyes either using or not using eyeglasses, a visual target displaying unit that uses an organic EL display panel, a display controlling unit that changes the visual target displayed on the displaying unit, an inputting unit for visual target viewing results, and a transmitting unit for measurement results. The portable visual acuity examination device comprises an optical system that can change the distance at which the visual target virtual image is visible. The portable visual acuity examination device detects whether eyeglasses are used and matches an uncorrected vision acuity examination and a corrected vision acuity examination. The portable visual acuity examination device switches between a C-type visual target and an E-type visual target. With data display, both the right and left display units are enabled.

公开(公告)号：US20130341694A1

公开(公告)日：2013-12-26

申请号：US13918042

申请日：2013-06-14

Applicant: ROHM Co., Ltd.

Inventor： Takuji MAEKAWA ,  Osamu MATSUSHIMA ,  Toshihisa MAEDA

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L31/02164 ,  H01L31/022466 ,  H01L31/0322

Abstract: A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.

Abstract translation: 根据本发明的光电转换器包括基板，布置在基板上的下电极层，布置在下电极层上以覆盖下电极层并划分成多个像素的黄铜矿结构的化合物半导体层， 配置在化合物半导体层上的透明电极层，以及配置在化合物半导体层上的各像素周围的屏蔽层。