公开(公告)号：US20040197945A1

公开(公告)日：2004-10-07

申请号：US10816356

申请日：2004-04-02

Applicant: Rohm and Haas Electronic Materials L.L.C.

Inventor： Egbert Woelk ,  Deodatta Vinayak Shenai-Khatkhate

IPC: H01L051/40

CPC classification number: C07F7/0807 ,  C07F7/30 ,  C23C16/18 ,  C23C16/22 ,  C23C16/28

Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

Abstract translation: 提供适合用作锗膜气相沉积前体的锗化合物。 还提供了使用这种化合物沉积含锗的薄膜的方法。 这种锗膜在电子器件的制造中特别有用。