公开(公告)号：US09209028B2

公开(公告)日：2015-12-08

申请号：US14145674

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cheng-Bai Xu ,  Cheng Han Wu ,  Dong Won Chung ,  Yoshihiro Yamamoto ,  George G. Barclay ,  Gerhard Pohlers

IPC: H01L21/266 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/266 ,  G03F7/091 ,  G03F7/405 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了在半导体器件中形成离子注入区域的方法。 所述方法包括：（a）提供具有要离子注入的多个区域的半导体衬底; （b）在半导体衬底上形成光致抗蚀剂图案，其中光致抗蚀剂图案由包含具有酸不稳定基团的基质聚合物，光致酸产生剂和溶剂的化学放大光致抗蚀剂组合物形成; （c）在所述光致抗蚀剂图案上涂覆去除组合物，其中所述去除组合物包含：基体聚合物; 选自热酸发生剂，光酸产生剂及其组合的酸发生剂; 和溶剂; （d）将所述涂覆的半导体衬底暴露于所述除酸组合物中从所述酸产生器产生酸的条件; （e）使涂覆的半导体衬底与漂洗剂接触以从衬底去除残留的去除组合物和浮渣; 和（f）使用光刻胶图案作为植入物掩模离子注入半导体衬底的多个区域。 该方法在半导体器件的制造中具有特别的适用性。

公开(公告)号：US09666436B2

公开(公告)日：2017-05-30

申请号：US14145726

申请日：2013-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cheng-Bai Xu ,  Cheng Han Wu ,  Dong Won Chung ,  Yoshihiro Yamamoto

IPC: H01L21/425 ,  H01L21/266 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/266 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.