公开(公告)号：US09076719B2

公开(公告)日：2015-07-07

申请号：US13972307

申请日：2013-08-21

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  Rohm and Haas Electronic Materials LLC

发明人： Rachel A. Segalman ,  Megan L. Hoarfrost ,  Ali Javey ,  Kuniharu Takei ,  Peter Trefonas, III

IPC分类号： H01L21/38 ,  H01L21/22 ,  H01L21/225 ,  H01L21/04 ,  H01L21/385

CPC分类号： H01L21/2254 ,  H01L21/0455 ,  H01L21/2225 ,  H01L21/225 ,  H01L21/228 ,  H01L21/385

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.

摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含含掺杂剂的聚合物和非极性溶剂的组合物的涂层; 并在750-1300℃的温度下退火衬底1秒至24小时以将掺杂剂扩散到衬底中; 其中所述含掺杂剂的聚合物是具有共价结合的掺杂剂原子的聚合物; 其中所述含掺杂剂的聚合物不含氮和硅; 并且其中所述方法没有在所述退火步骤之前在所述涂层上形成氧化物覆盖层的步骤。

公开(公告)号：US20150056793A1

公开(公告)日：2015-02-26

申请号：US13972307

申请日：2013-08-21

申请人： Rohm and Haas Electronic Materials LLC ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Rachel A. Segalman ,  Megan L. Hoarfrost ,  Ali Javey ,  Kuniharu Takei ,  Peter Trefonas, III

IPC分类号： H01L21/225

CPC分类号： H01L21/2254 ,  H01L21/0455 ,  H01L21/2225 ,  H01L21/225 ,  H01L21/228 ,  H01L21/385

摘要： Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.

摘要翻译： 本文公开了一种用于掺杂衬底的方法，包括在衬底上设置包含含掺杂剂的聚合物和非极性溶剂的组合物的涂层; 并在750-1300℃的温度下退火衬底1秒至24小时以将掺杂剂扩散到衬底中; 其中所述含掺杂剂的聚合物是具有共价结合的掺杂剂原子的聚合物; 其中所述含掺杂剂的聚合物不含氮和硅; 并且其中所述方法没有在所述退火步骤之前在所述涂层上形成氧化物覆盖层的步骤。