Programmable solid state photolithography mask
    2.
    发明申请
    Programmable solid state photolithography mask 审中-公开
    可编程固态光刻掩模

    公开(公告)号:US20070103612A1

    公开(公告)日:2007-05-10

    申请号:US11593163

    申请日:2006-11-03

    申请人: Nancy Lumpkin

    发明人: Nancy Lumpkin

    IPC分类号: G02F1/136

    CPC分类号: G03F7/70291 G02F1/15

    摘要: This invention relates to electrically programmable photolithography masks and to structures fabricated by such masks. An electrically programmable photolithography mask with memory to retain a programmed pattern after programming is described. The mask comprises: a single, photolithographic mask plate to provide a mechanical support for said mask; an array of pixels each pixel comprising an electrically programmable solid-state electro-opaque structure fabricated on said mask plate; a plurality of row electrodes; a plurality of column electrodes; said row and column electrodes defining said pixels and being configured for addressing individual said electro-opaque pixels for programming said mask to define a pattern of optical modulation by the mask; and a thin film protective covering layer over at least said array of electro-opaque pixels.

    摘要翻译: 本发明涉及电可编程光刻掩模和由这种掩模制造的结构。 描述了具有存储器的电可编程光刻掩模,用于在编程之后保持编程图案。 掩模包括:单个光刻掩模板,用于为所述掩模提供机械支撑; 每个像素的像素阵列包括在所述掩模板上制造的电可编程固态电不透明结构; 多个行电极; 多个列电极; 所述行和列电极限定所述像素并且被配置用于寻址单独的所述电不透明像素,用于对所述掩模进行编程以限定所述掩模的光学调制图案; 以及至少所述电不透明像素阵列上的薄膜保护覆盖层。