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公开(公告)号:US4653428A
公开(公告)日:1987-03-31
申请号:US733445
申请日:1985-05-10
IPC分类号: H01L21/3205 , C23C16/04 , C23C16/48 , H01L21/268 , H01L21/285 , H01L21/31 , C23C16/00
CPC分类号: C23C16/04 , C23C16/481 , H01L21/268 , H01L21/28562
摘要: An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.
摘要翻译: 提供了一种用于在衬底的金属和半导体表面上选择性地沉积金属膜的设备,其中衬底的沉积表面与不期望的入射辐射(例如红外辐射)隔离。