公开(公告)号：US20190040526A1

公开(公告)日：2019-02-07

申请号：US15668823

申请日：2017-08-04

Applicant: Royal Melbourne Institute of Technology

Inventor： Mohammad TAHA ,  Sumeet WALIA ,  Sharath SRIRAM ,  Madhu BHASKARAN

IPC: C23C14/58 ,  C23C14/00 ,  C23C14/08 ,  C23C14/35 ,  C01G31/02

Abstract: Method for fabricating a crystalline vanadium oxide (VO2) film comprising the steps of: a) depositing an amorphous VO2 film on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O2), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VO2 film to crystallise the amorphous VO2 film into a crystalline VO2 film that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VO2 film may be suitable for a broad range of substrates.