专利检索 ap:("Ruilong Xie" OR "Chang Seo Park" OR "William James Taylor, III" OR "John Iacoponi") AND inv:"William James Taylor, III" 第 1 页

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发明授权
Methods of forming a dielectric cap layer on a metal gate structure 有权
标题翻译：在金属栅极结构上形成电介质盖层的方法

公开(公告)号：US08728908B2

公开(公告)日：2014-05-20

申请号：US13205050

申请日：2011-08-08

申请人： Ruilong Xie , Chang Seo Park , William James Taylor, III , John Iacoponi

发明人： Ruilong Xie , Chang Seo Park , William James Taylor, III , John Iacoponi

IPC分类号： H01L21/76

CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/6659

摘要： Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.

摘要翻译： 本文公开了在半导体器件的栅极结构的金属层上形成含金属的绝缘材料区域的各种方法。在一个示例中，该方法包括形成晶体管的栅极结构，栅极结构至少包括第一金属层，并且通过执行气体簇离子束过程，在第一金属层中形成第一含金属绝缘材料区域将气体分子注入第一金属层。