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    Replacement metal gate semiconductor device formation using low resistivity metals
    1.
    发明授权
    Replacement metal gate semiconductor device formation using low resistivity metals 有权
    使用低电阻率金属的替代金属栅极半导体器件形成

    公开(公告)号：US08722491B2

    公开(公告)日：2014-05-13

    申请号：US13603726

    申请日：2012-09-05

    申请人： Chang Seo Park ,  Vimal K. Kamineni

    发明人： Chang Seo Park ,  Vimal K. Kamineni

    IPC分类号： H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/336 ,  H01L21/44

    CPC分类号： H01L29/401 ,  H01L29/66545 ,  H01L29/66795

    摘要： Embodiments of the present invention relate to approaches for forming RMG FinFET semiconductor devices using a low-resistivity metal (e.g., W) as an alternate gap fill metal. Specifically, the semiconductor will typically comprise a set (e.g., one or more) of dielectric stacks formed over a substrate to create one or more trenches/channels (e.g., short/narrow and/or long/wide trenches/channels). A work function layer (e.g., TiN) will be provided over the substrate (e.g., in and around the trenches). A low-resistivity metal gate layer (e.g., W) may then be deposited (e.g., via chemical vapor deposition) and polished (e.g., via chemical-mechanical polishing). Thereafter, the gate metal layer and the work function layer may be etched after the polishing to provide a trench having the etched gate metal layer over the etched work function layer along a bottom surface thereof.

    摘要翻译： 本发明的实施例涉及使用低电阻率金属（例如W）作为替代间隙填充金属形成RMG FinFET半导体器件的方法。 具体地，半导体通常将包括形成在衬底上以形成一个或多个沟槽（例如，短/窄和/或长/宽沟槽/沟道）的一组（例如，一个或多个）电介质叠层。 工作功能层（例如，TiN）将被提供在衬底上（例如，在沟槽中和周围）。 然后可以沉积低电阻金属栅极层（例如，W）（例如通过化学气相沉积）并抛光（例如，经由化学机械抛光）。 此后，可以在抛光之后蚀刻栅极金属层和功函数层，以沿着其底表面在蚀刻的功函数层上方提供具有蚀刻的栅极金属层的沟槽。

    Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same
    2.
    发明申请
    Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same 审中-公开
    形成由硅和包括其的器件组成的替代栅极的方法

    公开(公告)号：US20130043592A1

    公开(公告)日：2013-02-21

    申请号：US13213449

    申请日：2011-08-19

    申请人： Chang Seo Park ,  Jin Cho

    发明人： Chang Seo Park ,  Jin Cho

    IPC分类号： H01L29/49 ,  H01L21/28

    CPC分类号： H01L29/4966 ,  H01L21/76897 ,  H01L29/66545 ,  H01L29/7833

    摘要： Disclosed herein are various methods of forming a replacement gate comprised of silicon and various semiconductor devices incorporation such a replacement gate structure. In one example, the method includes removing a sacrificial gate electrode structure to define a gate opening, forming a replacement gate structure in the gate opening, the replacement gate structure including at least one metal layer and a silicon-containing gate structure that is at least partially made of a metal silicide and forming a protective layer above at least a portion of the replacement gate structure.

    摘要翻译： 本文公开了形成由硅构成的替代栅极和结合这种替代栅极结构的各种半导体器件的各种方法。 在一个示例中，该方法包括去除牺牲栅极电极结构以限定栅极开口，在栅极开口中形成替代栅极结构，所述替换栅极结构至少包括一个金属层和至少含有硅的栅极结构 部分地由金属硅化物制成并在替代栅极结构的至少一部分上方形成保护层。

    SEMICONDUCTOR DEVICE FABRICATION USING GATE SUBSTITUTION
    3.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION USING GATE SUBSTITUTION 有权
    使用栅极替代的半导体器件制造

    公开(公告)号：US20130005131A1

    公开(公告)日：2013-01-03

    申请号：US13174257

    申请日：2011-06-30

    申请人： Chang Seo Park

    发明人： Chang Seo Park

    IPC分类号： H01L21/28

    CPC分类号： H01L29/66545 ,  H01L21/28088 ,  H01L21/823842

    摘要： Methods is provided for forming a CMOS device. The method includes providing a substrate and depositing a gate stack on the substrate. The gate stack includes a gate dielectric and a dummy gate including polycrystalline silicon (polySi). The method also includes depositing a dielectric layer on the substrate after depositing the gate stack on the substrate. The method further includes substituting the dummy gate with a metal without first removing the dummy gate.

    摘要翻译： 提供了用于形成CMOS器件的方法。 该方法包括提供衬底并在衬底上沉积栅叠层。 栅极堆叠包括栅极电介质和包括多晶硅（polySi）的虚拟栅极。 该方法还包括在将栅极堆叠沉积在衬底上之后，在衬底上沉积电介质层。 该方法还包括在没有首先去除虚拟栅极的情况下用金属代替虚拟栅极。

    Method of fabricating a CMOS device with dual metal gate electrodes
    6.
    发明授权
    Method of fabricating a CMOS device with dual metal gate electrodes 失效
    制造具有双金属栅电极的CMOS器件的方法

    公开(公告)号：US07316950B2

    公开(公告)日：2008-01-08

    申请号：US10826665

    申请日：2004-04-16

    申请人： Chang Seo Park ,  Byung Jin Cho ,  Narayanan T. Balasubramanian

    发明人： Chang Seo Park ,  Byung Jin Cho ,  Narayanan T. Balasubramanian

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/513 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/517 ,  H01L29/518

    摘要： A method of constructing a dual metal gate CMOS structure that uses an ultra thin aluminum nitride (AINx) buffer layer between the metal gate and gate dielectric during processing for preventing the gate dielectric from being exposed in the metal etching process. After the unwanted gate metal is etched away, the CMOS structure is annealed. During the annealing, the buffer layer is completely consumed through reaction with the metal gate and a new metal alloy is formed, resulting in only a minimal increase in the equivalent oxide thickness. The buffer layer and gate metals play a key role in determining the work functions of the metal/dielectric interface, since the work functions of the original gate metals are modified as a result of the annealing process.

    摘要翻译： 一种构造双金属栅极CMOS结构的方法，其在处理期间在金属栅极和栅极电介质之间使用超薄氮化铝（AlN x×x））缓冲层，以防止栅极电介质暴露在金属中 蚀刻工艺。 在不需要的栅极金属被蚀刻掉之后，CMOS结构退火。 在退火过程中，缓冲层通过与金属栅极的反应而完全消耗，并形成新的金属合金，导致等效氧化物厚度的最小增加。 缓冲层和栅极金属在确定金属/电介质界面的功函数方面发挥关键作用，因为原始栅极金属的功函数作为退火过程的结果而被修改。

    Therapeutic composition for broad spectrum dermal disease
    7.
    发明授权
    Therapeutic composition for broad spectrum dermal disease 有权
    广谱皮肤病治疗组合物

    公开(公告)号：US06964952B2

    公开(公告)日：2005-11-15

    申请号：US10662002

    申请日：2003-09-12

    申请人： Chang Seo Park ,  Jin Wook Kim ,  Jin Hee Choi ,  Ui Chan Koh

    发明人： Chang Seo Park ,  Jin Wook Kim ,  Jin Hee Choi ,  Ui Chan Koh

    IPC分类号： A61K31/047 ,  A61K31/133 ,  A61K31/66

    CPC分类号： A61K31/047 ,  A61K31/133 ,  A61K31/66 ,  Y10S514/88 ,  Y10S514/882 ,  A61K2300/00

    摘要： The invention relates to a therapeutic composition for broad spectrum dermal disease and in particular, to a composition comprising principal lipid components of skin, preferably having about 30 to 90% by weight of a carrier for applying to skin; 0.01 to 5.0% by weight of sphingolipid long-chain base; 0.001 to 1.0% by weight of lysophosphatidic acid; and 1 to 40% by weight of organic or inorganic additives. The composition is useful for the treatment and improvement of atopic dermatitis, psoriasis, acne, ichthyosis, infectious dermatitis, pruritus, erythema derived from pruritus, vulnus, chapping of skin and ulcer, etc.

    摘要翻译： 本发明涉及用于广谱皮肤病的治疗组合物，特别涉及一种包含皮肤主要脂质组分的组合物，优选具有约30至90重量％的施用于皮肤的载体; 0.01〜5.0％重量的鞘脂长链碱; 0.001至1.0重量％的溶血磷脂酸; 和1至40重量％的有机或无机添加剂。 该组合物可用于治疗和改善特应性皮炎，牛皮癣，痤疮，鱼鳞病，感染性皮炎，瘙痒，源自瘙痒，外阴，皮肤和溃疡等的红斑等。

    Methods of forming a dielectric cap layer on a metal gate structure
    9.
    发明授权
    Methods of forming a dielectric cap layer on a metal gate structure 有权
    在金属栅极结构上形成电介质盖层的方法

    公开(公告)号：US08728908B2

    公开(公告)日：2014-05-20

    申请号：US13205050

    申请日：2011-08-08

    申请人： Ruilong Xie ,  Chang Seo Park ,  William James Taylor, III ,  John Iacoponi

    发明人： Ruilong Xie ,  Chang Seo Park ,  William James Taylor, III ,  John Iacoponi

    IPC分类号： H01L21/76

    CPC分类号： H01L29/66545 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/6659

    摘要： Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.

    摘要翻译： 本文公开了在半导体器件的栅极结构的金属层上形成含金属的绝缘材料区域的各种方法。 在一个示例中，该方法包括形成晶体管的栅极结构，栅极结构至少包括第一金属层，并且通过执行气体簇离子束过程，在第一金属层中形成第一含金属绝缘材料区域 将气体分子注入第一金属层。

    TECHNIQUES FOR USING MATERIAL SUBSTITUTION PROCESSES TO FORM REPLACEMENT METAL GATE ELECTRODES OF SEMICONDUCTOR DEVICES WITH SELF-ALIGNED CONTACTS
    10.
    发明申请
    TECHNIQUES FOR USING MATERIAL SUBSTITUTION PROCESSES TO FORM REPLACEMENT METAL GATE ELECTRODES OF SEMICONDUCTOR DEVICES WITH SELF-ALIGNED CONTACTS 有权
    使用材料替代方法形成替代的技术使用自对准接触的半导体器件的金属栅极电极

    公开(公告)号：US20130260548A1

    公开(公告)日：2013-10-03

    申请号：US13438394

    申请日：2012-04-03

    申请人： Chang Seo Park

    发明人： Chang Seo Park

    IPC分类号： H01L21/283

    CPC分类号： H01L29/66545 ,  H01L21/76897 ,  H01L29/49 ,  H01L29/51 ,  H01L29/7833

    摘要： Generally, the present disclosure is directed to techniques for using material substitution processes to form replacement metal gate electrodes, and for forming self-aligned contacts to semiconductor devices made up of the same. One illustrative method disclosed herein includes removing at least a dummy gate electrode to define a gate cavity, forming a work-function material in said gate cavity, forming a semiconductor material above said work-function material, and performing a material substitution process on said semiconductor material to substitute a replacement material for at least a portion of said semiconductor material.

    摘要翻译： 通常，本公开涉及用于使用材料替代工艺以形成替代金属栅极电极的技术，以及用于形成与其组成的半导体器件的自对准触点。 本文公开的一种说明性方法包括移除至少一个虚拟栅极电极以限定栅极腔，在所述栅极腔中形成功函数材料，在所述功函数材料上方形成半导体材料，以及对所述半导体 将替换材料替换为所述半导体材料的至少一部分的材料。