TEMPERATURE CONTROL DEVICE
    1.
    发明申请
    TEMPERATURE CONTROL DEVICE 审中-公开
    温度控制装置

    公开(公告)号:US20080314564A1

    公开(公告)日:2008-12-25

    申请号:US12110225

    申请日:2008-04-25

    IPC分类号: F28D15/00

    CPC分类号: G05D23/19

    摘要: A temperature control device controls the temperature of a controlled object by circulating a fluid in a temperature adjustment unit arranged near the controlled object. The temperature control device comprises a heating pathway that heats and circulates the fluid in the temperature adjustment unit, a cooling pathway that cools and circulates the fluid in the temperature adjustment unit, a bypass pathway that does not pass the fluid through the heating pathway and cooling pathway, but circulates the fluid in the temperature adjustment unit, and adjustment means that adjust a flow ratio of the fluid that is supplied from the heating pathway, cooling pathway, and bypass pathway to the temperature adjustment unit via a confluence unit that combines these flows. The adjustment means are provided on a downstream side of each of the heating pathway, the cooling pathway, and the bypass pathway and on the upstream side of the confluence unit.

    摘要翻译: 温度控制装置通过在布置在受控对象附近的温度调节单元中循环流体来控制受控物体的温度。 温度控制装置包括加热和循环温度调节单元中的流体的加热通道,使温度调节单元中的流体冷却和循环的冷却通道,不通过流体通过加热通道和冷却的旁路通路 使温度调节单元中的流体循环,以及调节装置,其通过组合这些流量的汇流单元,将从加热通路,冷却通路和旁路通路供给的流体的流量比调整到温度调节单元 。 调节装置设置在每个加热通道,冷却通道和旁路通路的下游侧以及汇流单元的上游侧。

    TEMPERATURE CONTROL DEVICE FOR TARGET SUBSTRATE, TEMPERATURE CONTROL METHOD AND PLASMA PROCESSING APPARATUS INCLUDING SAME
    2.
    发明申请
    TEMPERATURE CONTROL DEVICE FOR TARGET SUBSTRATE, TEMPERATURE CONTROL METHOD AND PLASMA PROCESSING APPARATUS INCLUDING SAME 有权
    用于目标基板的温度控制装置,温度控制方法和包括其中的等离子体处理装置

    公开(公告)号:US20090118872A1

    公开(公告)日:2009-05-07

    申请号:US12261341

    申请日:2008-10-30

    IPC分类号: G05D23/00 G05D11/02

    CPC分类号: G05D23/1934

    摘要: A temperature control device for a target substrate includes a mounting table having temperature control members respectively provided in temperature systems to control temperatures of regions of the target substrate to respective predetermined temperature levels; circulation channels through which fluids passing through the temperature control members flow; and heating channels each for flowing therein a heated fluid having a higher temperature compared to the fluids circulating in the circulation channels. The device further includes cooling channels each for flowing therein a cooled fluid having a lower temperature compared to the fluids circulating in the circulation channels; and joining units that join the circulation channels to build the respective temperature control systems, the joining units having flow rate control units that controls flow rate ratios of the fluids supplied from the respective channels to the temperature control members.

    摘要翻译: 目标基板的温度控制装置包括:安装台,其具有温度控制部件,温度控制部件分别设置在温度系统中,以将目标基板的区域的温度控制到各自的预定温度水平; 流过温度控制构件的流体流过的循环通道; 并且每个加热通道在其中流动与在循环通道中循环的流体相比具有较高温度的加热流体。 该装置还包括冷却通道,每个用于在其中流动具有与在循环通道中循环的流体相比具有较低温度的冷却流体的冷却通道; 以及接合单元,其连接循环通道以构建各自的温度控制系统,所述接合单元具有流量控制单元,其控制从各个通道供应到温度控制构件的流体的流量比。

    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE CLEANING APPARATUS
    3.
    发明申请
    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE CLEANING APPARATUS 有权
    基板加工系统和基板清洗装置

    公开(公告)号:US20080236634A1

    公开(公告)日:2008-10-02

    申请号:US12057807

    申请日:2008-03-28

    CPC分类号: H01L21/67051 H01L21/6708

    摘要: A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

    摘要翻译: 能够完全除去附着在基板的背面或周围的异物的基板处理系统。 基板处理装置对基板进行规定的处理。 基板清洁装置在预定处理之前和之后清洁基板。 喷射装置将气相和液相以及高温气体的两相中的清洗物质喷射到基板的后表面或周边。

    SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工设备

    公开(公告)号:US20080226518A1

    公开(公告)日:2008-09-18

    申请号:US12045931

    申请日:2008-03-11

    申请人: Ryo NONAKA

    发明人: Ryo NONAKA

    IPC分类号: B01J19/00

    CPC分类号: H01L21/67109

    摘要: A substrate processing apparatus includes: a processing chamber for accommodating and processing a target substrate therein; a supporting member for supporting the target substrate in the processing chamber; a processing gas supply mechanism for supplying, into the processing chamber, a processing gas which generates radicals for processing the target substrate; a catalytic heating element disposed to face the target substrate, the element radiating heat when an electric power is applied thereto and generating the radicals by a catalytic action as the processing gas contacts the catalytic heating element; and a power supply mechanism for supplying the power to the catalytic heating element to allow the catalytic heating element to radiate the heat. The apparatus further includes a driving mechanism for moving the target substrate close to or apart from the catalytic heating element by means of moving the supporting member, to thereby control a temperature of the target substrate.

    摘要翻译: 一种基板处理装置,包括:处理室,用于在其中容纳和处理目标基板; 支撑构件,用于将处理室中的目标衬底支撑; 处理气体供给机构,用于向处理室供给生成用于处理目标基板的自由基的处理气体; 所述催化加热元件设置成面对所述目标基板,所述元件在施加电力时散热并且随着所述处理气体接触所述催化加热元件而通过催化作用产生所述自由基; 以及用于向催化加热元件供电以允许催化加热元件辐射热的供电机构。 该装置还包括用于通过移动支撑构件使目标基板靠近或远离催化加热元件移动的驱动机构,从而控制目标基板的温度。

    MECHANISM FOR VARYING CYLINDER STOP POSITION AND SUBSTRATE PROCESSING APPARATUS INCLUDING SAME
    5.
    发明申请
    MECHANISM FOR VARYING CYLINDER STOP POSITION AND SUBSTRATE PROCESSING APPARATUS INCLUDING SAME 审中-公开
    改变气缸停止位置的机构和基板加工装置

    公开(公告)号:US20090049981A1

    公开(公告)日:2009-02-26

    申请号:US12192602

    申请日:2008-08-15

    IPC分类号: F15B15/24

    摘要: A cylinder stop position varying mechanism is employed in a cylinder having a piston and a shaft. The cylinder stop position varying mechanism includes a stopper fitted onto the shaft; a pair of limiters for stopping a reciprocating movement of the piston by contact with the stopper; and a limiter moving mechanism for varying positions of the limiters. The cylinder is driven by a hydraulic pressure, and the limiter moving mechanism is provided to each of the pair of limiters to control positions of the limiters independently.

    摘要翻译: 在具有活塞和轴的气缸中采用气缸停止位置变化机构。 气缸停止位置变化机构包括安装在轴上的止动件; 一对限制器,用于通过与止动器接触来停止活塞的往复运动; 以及限制器移动机构,用于改变限位器的位置。 气缸由液压驱动,并且限制器移动机构设置在每对限制器中,以独立地控制限位器的位置。