公开(公告)号：US20130002313A1

公开(公告)日：2013-01-03

申请号：US13613359

申请日：2012-09-13

申请人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： H03K3/00

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。 升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向 相对于由自举容量形成的升压电压。

公开(公告)号：US08063620B2

公开(公告)日：2011-11-22

申请号：US13023560

申请日：2011-02-09

申请人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/40 ,  G05F1/10

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

公开(公告)号：US07859326B2

公开(公告)日：2010-12-28

申请号：US12216733

申请日：2008-07-10

申请人： Toshio Nagasawa ,  Ryotaro Kudo

发明人： Toshio Nagasawa ,  Ryotaro Kudo

IPC分类号： H01J19/82

CPC分类号： H02M3/156 ,  Y10T307/826

摘要： A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.

摘要翻译： 开关电源装置对半导体集成电路装置进行快速响应的稳定运行。 在电感器的输出侧和地电位之间提供电容器。 第一功率MOSFET将电流从输入电压提供给电感器的输入侧。 当第一功率MOSFET关断时，第二个功率MOSFET导通，允许电感器的输入侧处于预定电位。 使用对应于从电感器的输出侧获得的输出电压的第一反馈信号和对应于流向第一功率MOSFET的电流的第二反馈信号来形成PWM信号。 第一功率MOSFET具有垂直型MOS结构的多个单元。

公开(公告)号：US20100277143A1

公开(公告)日：2010-11-04

申请号：US12834565

申请日：2010-07-12

申请人： Ryotaro Kudo ,  Toshio Nagasawa

发明人： Ryotaro Kudo ,  Toshio Nagasawa

IPC分类号： G05F1/10

CPC分类号： H02M3/1584 ,  Y10S323/901

摘要： To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.

摘要翻译： 提供能够以低成本实现多相电源的电源单元。 例如，多个半导体器件DEV [1] -DEV [n]中的每一个包括触发输入端子TRG_IN，触发输出端子TRG_OUT和延迟从TRG_IN输入的脉冲信号并将其输出到TRG_OUT的定时器电路TM 。 DEV [1] -DEV [n]通过其自身的TRG_IN相互耦合成环形，其耦合到除了​​自身之外的一个半导体器件的TRG_OUT。 DEV [1] -DEV [n]中的每一个通过使用来自TRG_IN的脉冲信号作为起始点进行开关操作，并且将电流馈送到对应于其自身的电感器L. 此外，DEV [1]例如由启动触发端子ST被设置为接地电压GND而在启动期间仅产生上述脉冲信号。

公开(公告)号：US07902799B2

公开(公告)日：2011-03-08

申请号：US12403966

申请日：2009-03-13

申请人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/10 ,  G05F1/40

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和 衬底栅极彼此连接，使得当MOSFET被制成断开状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的 容量。

公开(公告)号：US20090179620A1

公开(公告)日：2009-07-16

申请号：US12403966

申请日：2009-03-13

申请人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/00

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和 衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的 容量。

公开(公告)号：US20070159150A1

公开(公告)日：2007-07-12

申请号：US10587215

申请日：2005-01-14

申请人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/00

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 本发明提供一种开关电源和半导体集成电路，其即使在电源电压VDD低的情况下也能够实现高电位侧开关元件M 1的足够的驱动电压的获取。 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和 衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的 容量。

公开(公告)号：US08471541B2

公开(公告)日：2013-06-25

申请号：US13469700

申请日：2012-05-11

申请人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： Kyoichi Hosokawa ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/40 ,  G05F1/10

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。 升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，并且在一个源极/漏极区域和衬底栅极之间的结二极管被反向导向 相对于由自举容量形成的升压电压。

公开(公告)号：US07986133B2

公开(公告)日：2011-07-26

申请号：US12834565

申请日：2010-07-12

申请人： Ryotaro Kudo ,  Toshio Nagasawa

发明人： Ryotaro Kudo ,  Toshio Nagasawa

IPC分类号： G05F1/00

CPC分类号： H02M3/1584 ,  Y10S323/901

摘要： To provide a power supply unit capable of realizing a multiphase power supply at low cost. For example, each of a plurality of semiconductor devices DEV[1]-DEV[n] comprises a trigger input terminal TRG_IN, a trigger output terminal TRG_OUT, and a timer circuit TM that delays a pulse signal input from TRG_IN and outputs it to TRG_OUT. DEV[1]-DEV[n] are mutually coupled in a ring shape by its own TRG_IN being coupled to TRG_OUT of one semiconductor device other than itself. Each of DEV[1]-DEV[n] performs switching operation by using the pulse signal from TRG_IN as a starting point, and feeds a current into an inductor L corresponding to itself. Moreover, DEV[1] generates the above-described pulse signal only once during startup by a start trigger terminal ST being set to a ground voltage GND, for example.

摘要翻译： 提供能够以低成本实现多相电源的电源单元。 例如，多个半导体器件DEV [1] -DEV [n]中的每一个包括触发输入端子TRG_IN，触发输出端子TRG_OUT和延迟从TRG_IN输入的脉冲信号并将其输出到TRG_OUT的定时器电路TM 。 DEV [1] -DEV [n]通过其自身的TRG_IN相互耦合成环形，其耦合到除了​​自身之外的一个半导体器件的TRG_OUT。 DEV [1] -DEV [n]中的每一个通过使用来自TRG_IN的脉冲信号作为起始点进行开关操作，并且将电流馈送到对应于其自身的电感器L. 此外，DEV [1]例如由启动触发端子ST被设置为接地电压GND而在启动期间仅产生上述脉冲信号。

公开(公告)号：US20110127975A1

公开(公告)日：2011-06-02

申请号：US13023560

申请日：2011-02-09

申请人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

发明人： KYOICHI HOSOKAWA ,  Ryotaro Kudo ,  Toshio Nagasawa ,  Koji Tateno

IPC分类号： G05F1/40

CPC分类号： H02M3/1588 ,  G05F1/44 ,  H02M7/538 ,  H03F3/217 ,  H03F2200/351 ,  H03F2200/78 ,  H03K17/063 ,  H03K17/687 ,  Y02B70/1466

摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

摘要翻译： 本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分的驱动电压的获取。 在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压， 在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和 衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的 容量。