公开(公告)号：US20160056312A1

公开(公告)日：2016-02-25

申请号：US14888578

申请日：2014-04-30

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Jörg PALM ,  Gérard RUITENBERG ,  Mathieu URIEN ,  Robert LECHNER ,  Yémima BON SAINT COME

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  C03C17/3613 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3678 ,  H01L31/022425 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

Abstract: A back contact substrate for a photovoltaic cell, including a carrier substrate and an electrode, the electrode including a conductive coating including a metallic thin film based on a metal or metal alloy; a barrier to selenization thin film for protecting the conductive coating and based on at least one among MoxOyNz, WxOyNz, TaxOyNz, NbxOyNz, RexOyNz.

Abstract translation: 一种用于光伏电池的背接触基板，包括载体基板和电极，所述电极包括基于金属或金属合金的包含金属薄膜的导电涂层; 用于保护导电涂层并基于MoxOyNz，WxOyNz，TaxOyNz，NbxOyNz，RexOyNz中的至少一种的硒化薄膜的屏障。

公开(公告)号：US20160064581A1

公开(公告)日：2016-03-03

申请号：US14888618

申请日：2014-04-30

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Mathieu URIEN ,  Jörg PALM ,  Gérard RUITENBERG ,  Robert LECHNER ,  Yémima BON SAINT COME ,  Laura Jane SINGH

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  C03C17/3613 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3678 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based: on at least one among copper (Cu) and silver (Ag); and on zinc (Zn).

Abstract translation: 用于光伏电池的背接触基板包括载体基板和电极，所述电极包括基于铜（Cu）和银（Ag）中的至少一种的合金薄膜; 和锌（Zn）。

公开(公告)号：US20150318433A1

公开(公告)日：2015-11-05

申请号：US14651374

申请日：2013-12-11

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Stefan JOST ,  Robert LECHNER ,  Thomas DALIBOR ,  Patrick ERAERDS

IPC: H01L31/18 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/0445

CPC classification number: H01L31/1864 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0445 ,  H01L31/065 ,  H01L31/0749

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.2) are reactively converted to form the compound semiconductor (2).

Abstract translation: 本发明涉及一种制备化合物半导体（2）的方法，包括以下步骤：制备至少一个由第一前体层（5.1），第二前体层（6）组成的前体层叠层（11） 和第三前体层（5.2），其中在第一阶段中，通过将金属铜，铟和镓沉积到主体（12）上而制备第一前体层（5.1），并且在第二阶段中， 通过将至少一种选自硫和硒的硫属元素沉积到第一前体层（5.1）上而制备第二前体层（6），并且在第三阶段通过沉积金属制备第三前体层（5.2） 铜，铟和镓到第二前体层（6）上; 在处理室（13）中热处理所述至少一个前体层叠层（11），使得第一前体层（5.1）的金属，第二前体层（6）的至少一个硫属元素和金属 第三前体层（5.2）被反应转化以形成化合物半导体（2）。

公开(公告)号：US20160064580A1

公开(公告)日：2016-03-03

申请号：US14888598

申请日：2014-04-30

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Jörg PALM ,  Stéphane AUVRAY ,  Gérard RUITENBERG ,  Mathieu URIEN ,  Robert LECHNER ,  Yémima BON SAINT COME ,  Laura Jane SINGH

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  C03C17/3613 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3678 ,  H01L31/022425 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based on at least two elements, at least one first element MA chosen among copper (Cu), silver (Ag) and gold (Au), and at least one second element MB chosen among zinc (Zn), titanium (Ti), tin (Sn), silicon (Si), germanium (Ge), zirconium (Zr), hafnium (Hf), carbon (C) and lead (Pb).

Abstract translation: 用于光伏电池的背接触基板包括载体基板和电极，所述电极包括基于至少两个元件的合金薄膜，至少一个第一元件MA选自铜（Cu），银（Ag）和金（ （Zn），钛（Ti），锡（Sn），硅（Si），锗（Ge），锆（Zr），铪（Hf），碳（C）中选择的至少一种第二元素MB ）和铅（Pb）。