公开(公告)号：US20150072460A1

公开(公告)日：2015-03-12

申请号：US14487805

申请日：2014-09-16

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Joerg PALM ,  Stephan POHLNER ,  Stefan JOST ,  Thomas HAPP

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/0617 ,  C23C14/0623 ,  C23C14/54 ,  C23C14/564 ,  C23C16/4412 ,  C30B23/005 ,  C30B29/48

Abstract: The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at least one source with material to be deposited, as well as at least one device for controlling the deposition process, implemented such that the concentration of at least one component of the material to be deposited can be modified in its gas phase prior to deposition on the substrate by selective binding of a specified quantity of the at least one component, wherein the selectively bound quantity of the at least one component can be controlled by modifying at least one control parameter that is actively coupled to a binding rate or the component. It further relates to a device for depositing a layer made of at least two components on an object, wherein a device for controlling the deposition process has at least one gettering element made of a reactive material, wherein the reactive material includes copper and/or molybdenum. It further relates to a method for depositing a layer made of at least two components on an object, wherein a selectively bound quantity of at least one component is controlled by modifying a binding rate of a device for controlling the deposition process.

Abstract translation: 本发明涉及一种用于在物体上沉积由至少两个部件构成的层的装置，其中沉积室用于设置物体，至少一个源与待沉积的材料以及至少一个用于控制沉积物的装置 方法，使得待沉积的材料的至少一种组分的浓度可以在通过选择性结合指定量的至少一种组分沉积到衬底上之前在其气相中改性，其中选择性结合量 可以通过修改主动耦合到绑定速率或组件的至少一个控制参数来控制至少一个组件。 它还涉及一种用于在物体上沉积由至少两个组分制成的层的装置，其中用于控制沉积工艺的装置具有至少一个由反应性材料制成的吸气元件，其中反应性材料包括铜和/或钼 。 它还涉及一种用于在物体上沉积由至少两种组分制成的层的方法，其中通过改变用于控制沉积工艺的装置的结合速率来控制选择性结合量的至少一种组分。

公开(公告)号：US20160163905A1

公开(公告)日：2016-06-09

申请号：US14900939

申请日：2014-06-27

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Jörg PALM ,  Stephan POHLNER ,  Thomas HAPP ,  Roland DIETMÜLLER ,  Thomas DALIBOR ,  Stefan JOST ,  Rajneesh VERMA

IPC: H01L31/0749 ,  H01L31/18 ,  H01L31/0336 ,  H01L31/0445

CPC classification number: H01L31/0749 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02568 ,  H01L31/0336 ,  H01L31/0445 ,  H01L31/18

Abstract: The invention concerns a layer system for thin-layer solar cells, said layer system comprising an absorber layer for absorbing light and a buffer layer on the absorber layer, said buffer layer containing NaxIny-x/3S, in which 0.063≦x≦0.625 and 0.681≦y≦1.50.

Abstract translation: 本发明涉及一种用于薄层太阳能电池的层系统，所述层系统包括用于吸收光的吸收层和吸收层上的缓冲层，所述缓冲层含有NaxIny-x / 3S，其中0.063和nlE; x和nlE; 0.625 和0.681＆nlE; y＆nlE; 1.50。

公开(公告)号：US20150325722A1

公开(公告)日：2015-11-12

申请号：US14409684

申请日：2013-06-19

Applicant: Saint-Gobain Glass France

Inventor： Jörg PALM ,  Stephan POHLNER ,  Thomas HAPP ,  Thomas DALIBOR ,  Stefan JOST ,  Roland DIETMÜLLER

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0324 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4) that includes a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4) and includes halogen-enriched InxSy with ⅔≦x/y≦1, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ≧2 and the layer thickness (d1) of the first layer region (5.1) is ≦50% of the layer thickness (d) of the buffer layer (5).

Abstract translation: 本发明涉及一种用于薄膜太阳能电池（100）和太阳能模块的层系统（1），包括一个吸收层（4），该吸收层包括一个硫族化物化合物半导体和一个缓冲层（5） 层（4），并且包括具有⅔和nlE的卤素富集的In x S y; x / y＆n l E; 1，其中缓冲层（5）由邻近吸收层（4）的第一层区域（5.1）和卤素摩尔分数A1组成， 与第一层区域（5.1）邻接的第二层区域（5.2）与卤素摩尔分数A2，比率A1 / A2为≥2，第一层区域（5.1）的层厚度（d1）为 缓冲层（5）的层厚度（d）。

公开(公告)号：US20150318433A1

公开(公告)日：2015-11-05

申请号：US14651374

申请日：2013-12-11

Applicant: SAINT-GOBAIN GLASS FRANCE

Inventor： Stefan JOST ,  Robert LECHNER ,  Thomas DALIBOR ,  Patrick ERAERDS

IPC: H01L31/18 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/0445

CPC classification number: H01L31/1864 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0445 ,  H01L31/065 ,  H01L31/0749

Abstract: The present invention relates to a method for producing a compound semiconductor (2), which comprises the following steps: Producing at least one precursor layer stack (11), consisting of a first precursor layer (5.1), a second precursor layer (6), and a third precursor layer (5.2), wherein, in a first stage, the first precursor layer (5.1) is produced by depositing the metals copper, indium, and gallium onto a body (12), and, in a second stage, the second precursor layer (6) is produced by depositing at least one chalcogen, selected from sulfur and selenium, onto the first precursor layer (5.1) and, in a third stage, the third precursor layer (5.2) is produced by depositing the metals copper, indium, and gallium onto the second precursor layer (6); Heat treating the at least one precursor layer stack (11) in a process chamber (13) such that the metals of the first precursor layer (5.1), the at least one chalcogen of the second precursor layer (6), and the metals of the third precursor layer (5.2) are reactively converted to form the compound semiconductor (2).

Abstract translation: 本发明涉及一种制备化合物半导体（2）的方法，包括以下步骤：制备至少一个由第一前体层（5.1），第二前体层（6）组成的前体层叠层（11） 和第三前体层（5.2），其中在第一阶段中，通过将金属铜，铟和镓沉积到主体（12）上而制备第一前体层（5.1），并且在第二阶段中， 通过将至少一种选自硫和硒的硫属元素沉积到第一前体层（5.1）上而制备第二前体层（6），并且在第三阶段通过沉积金属制备第三前体层（5.2） 铜，铟和镓到第二前体层（6）上; 在处理室（13）中热处理所述至少一个前体层叠层（11），使得第一前体层（5.1）的金属，第二前体层（6）的至少一个硫属元素和金属 第三前体层（5.2）被反应转化以形成化合物半导体（2）。