公开(公告)号：US11908924B2

公开(公告)日：2024-02-20

申请号：US17652843

申请日：2022-02-28

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12 ,  H10K59/00 ,  H10K59/121 ,  H10K59/123

CPC分类号： H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/14692 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/00 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123

摘要： A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US11289588B2

公开(公告)日：2022-03-29

申请号：US16824339

申请日：2020-03-19

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12

摘要： A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US20180233575A1

公开(公告)日：2018-08-16

申请号：US15730475

申请日：2017-10-11

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC分类号： H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14692 ,  H01L27/3225 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US11551611B2

公开(公告)日：2023-01-10

申请号：US17413617

申请日：2018-12-18

申请人： Samsung Display Co., Ltd.

发明人： Sunhee Lee ,  Seryeong Kim ,  Eunhye Ko ,  Eoksu Kim ,  Eunhyun Kim

IPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G3/3275

摘要： A pixel circuit includes an organic light emitting element, a switching transistor configured to be turned on or off in response to a scan signal, a storage capacitor configured to store a data signal applied through a data line when the switching transistor is turned on, a driving transistor configured to allow a driving current corresponding to the data signal stored in the storage capacitor to flow into the organic light emitting element, and an emission control transistor implemented by an oxide thin film transistor, connected in series to the organic light emitting element and the driving transistor between a high power voltage and a low power voltage, and configured to be turned on or off in response to an emission control signal. The pixel circuit performs a back-biasing operation that compensates for a change in a threshold voltage of the emission control transistor by applying a back-biasing voltage to the emission control transistor.

公开(公告)号：US10763281B2

公开(公告)日：2020-09-01

申请号：US15654005

申请日：2017-07-19

申请人： Samsung Display Co., Ltd.

发明人： Sunhee Lee ,  Seryeong Kim ,  Eunhyun Kim

IPC分类号： H01L27/12 ,  H01L27/32

摘要： A semiconductor device includes a base substrate, a first thin film transistor disposed on the base substrate, a second thin film transistor disposed on the base substrate, and a plurality of insulating layers disposed on the base substrate. The first thin film transistor includes a first input electrode, a first output electrode, a first control electrode, and a first oxide semiconductor pattern, which are disposed on the base substrate. The second thin film transistor includes a second input electrode, a second output electrode, a second control electrode, and a second oxide semiconductor pattern, which are disposed on the base substrate. The first oxide semiconductor pattern includes a crystalline oxide semiconductor, and the second oxide semiconductor pattern includes an oxide semiconductor having a crystal structure different from a crystal structure of the first oxide semiconductor pattern.