摘要:
A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.
摘要:
A touch sensing display device includes: a thin film transistor array panel including a thin film transistor; and an opposing display panel facing the thin film transistor array panel. The opposing display panel includes a piezoelectric sensor including a capacitive sensor and a piezoelectric layer. The capacitive sensor includes sensing wires, driving wires, and a bridge connecting the sensing wires together or the driving wires together. The piezoelectric sensor further includes a pair of electrodes, the piezoelectric layer being disposed between the pair of electrodes. The bridge and a first electrode of the pair of electrodes are formed of the same material and in the same layer.
摘要:
The present disclosure relates to a display device including a touch sensor and a manufacturing method thereof, and more particularly, to a display device including a touch sensor using a piezoelectric material and a manufacturing method thereof. The display device includes a first substrate, wherein a plurality of thin film transistors are disposed on the first substrate; a second substrate disposed facing the first substrate; a plurality of piezoelectric elements disposed on the second substrate; and a first sensing electrode overlapping the piezoelectric elements, the first sensing electrode being configured to transfer a sensing voltage generated as a result of pressure applied to the piezoelectric elements.
摘要:
An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.
摘要:
A display device includes a display panel which displays an image, a cushion tape member which is disposed below the display panel to protect a rear surface of the display panel, and includes a first cushion tape and a second cushion tape, a sound element which is disposed between the first cushion tape and the second cushion tape, and includes a pair of electrodes and a vibrating material layer disposed between the pair of electrodes.
摘要:
A display device includes a substrate, a thin film transistor disposed on the substrate, where the thin film transistor includes a drain electrode, a passivation layer disposed on the substrate covering the thin film transistor, a common electrode disposed on the passivation layer, where the common electrode receives a common voltage, a liquid crystal layer disposed in a microcavity layer on the common electrode, a roof layer disposed covering the liquid crystal layer, and a pixel electrode disposed on the roof layer, and a method of manufacturing the display device is provided.