DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20220302237A1

    公开(公告)日:2022-09-22

    申请号:US17831297

    申请日:2022-06-02

    IPC分类号: H01L27/32 G09G3/3233

    摘要: A display device includes pixels. Each of the pixels includes: a first transistor including a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node; a second transistor including a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node; a first sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the first node, and a second electrode connected to a fourth node; and a second sub-transistor including a gate electrode connected to the first scan line, a first electrode connected to the fourth node, and a second electrode connected to the third node. A channel width of the second sub-transistor is wider than a channel width of the first sub-transistor.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240021770A1

    公开(公告)日:2024-01-18

    申请号:US18336200

    申请日:2023-06-16

    摘要: An embodiment of the invention provides a display device including: a substrate; a first transistor comprising a first semiconductor layer and a second transistor comprising a second semiconductor layer, the first and second semiconductor layers positioned on the substrate; a light emitting diode connected to the first transistor, wherein: the first transistor is a driving transistor; the second transistor is a switching transistor; a first concentration of fluorine included in the first semiconductor layer is higher than a second concentration of fluorine in the second semiconductor layer; and a first difference between the first and second concentrations substantially at or near a first interface of the first and second semiconductor layers is larger than a second difference between the first and second concentrations at a second interface of the first and second semiconductor layers, the second interface further from the substrate than the first interface.