THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20160126256A1

    公开(公告)日:2016-05-05

    申请号:US14707287

    申请日:2015-05-08

    Abstract: A TFT substrate including a base substrate that includes a plurality of pixel areas; a gate line on the base substrate and extending in a first direction; a data line on the gate line and extending in a second direction; a TFT connected to the gate line and the data line, the TFT including a gate electrode, a semiconductor pattern, and source and drain electrodes, the semiconductor pattern overlapping the gate electrode, the source electrode and the drain electrode overlapping the semiconductor pattern, and the drain electrode being spaced apart from the source electrode; an inorganic insulating pattern covering the data line, the inorganic insulating pattern including an opening aligned with the pixel areas; a shielding electrode overlapping the data line, the shielding electrode on the inorganic insulating pattern; and a pixel electrode on the pixel areas, the pixel electrode being electrically connected to the drain electrode through a first contact hole.

    Abstract translation: 1.一种TFT基板,包括:包括多个像素区域的基板; 基底基板上的栅极线并沿第一方向延伸; 栅极线上的数据线并沿第二方向延伸; 连接到栅极线和数据线的TFT,TFT包括栅电极,半导体图案和源极和漏极,与栅电极重叠的半导体图案,与半导体图案重叠的源电极和漏极,以及 所述漏电极与所述源电极间隔开; 覆盖数据线的无机绝缘图案,无机绝缘图案包括与像素区域对准的开口; 与数据线重叠的屏蔽电极,无机绝缘图案上的屏蔽电极; 和像素电极,像素电极通过第一接触孔与漏电极电连接。

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