公开(公告)号：US10723946B2

公开(公告)日：2020-07-28

申请号：US16157054

申请日：2018-10-10

申请人： Samsung Display Co., Ltd. ,  Dongwoo Fine-Chem Co., Ltd.

发明人： Jonghee Park ,  Kitae Kim ,  Jinseock Kim ,  Beomsoo Kim ,  Sangtae Kim ,  Kyungbo Shim ,  Giyong Nam ,  Youngjin Yoon ,  Daesung Lim

IPC分类号： C09K13/06 ,  H01L27/12 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32

摘要： An etchant includes: based on a total weight of the etchant, about 1 wt % to about 15 wt % of sulfurized peroxide, about 5 wt % to about 10 wt % of nitric acid, about 20 wt % to about 40 wt % of organic acid, about 0.05 wt % to about 5 wt % of ferric nitrate, about 0.1 wt % to about 5 wt % of ionic sequestrant, and 0.1 wt % to 5 wt % of corrosion inhibitor, wherein a remaining amount is deionized water.

公开(公告)号：US10465296B2

公开(公告)日：2019-11-05

申请号：US15005614

申请日：2016-01-25

申请人： Samsung Display Co., Ltd. ,  Dongwoo Fine-Chem Co., Ltd.

发明人： Soomin An ,  Youngjun Kim ,  Hongsick Park ,  Inseol Kuk ,  Youngchul Park ,  Inho Yu ,  Seungsoo Lee ,  Jongmun Lee ,  Daesung Lim

IPC分类号： C23F1/18 ,  C23F1/26 ,  H01L27/12 ,  H01L21/3213 ,  H01L29/49

摘要： An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

公开(公告)号：US11225721B2

公开(公告)日：2022-01-18

申请号：US16284629

申请日：2019-02-25

申请人： SAMSUNG DISPLAY CO., LTD. ,  DONGWOO FINE-CHEM Co., Ltd.

发明人： Jinhyung Kim ,  Joohwan Chung ,  Jinsook Kim ,  Haccheol Kim ,  Byungsu Lee ,  Changsoo Kim ,  Jungseek Jung ,  Dongki Kim ,  Sangtae Kim ,  Giyong Nam ,  Youngchul Park ,  Kyungbo Shim ,  Daesung Lim ,  Sanghoon Jang

IPC分类号： C23F1/30 ,  H01L21/3213 ,  C09K13/04 ,  C09K13/00 ,  H01L21/465 ,  C09K13/06 ,  H01L21/302 ,  H01L21/306 ,  H01L29/786 ,  C23F1/16

摘要： A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.