-
公开(公告)号:US11225721B2
公开(公告)日:2022-01-18
申请号:US16284629
申请日:2019-02-25
发明人: Jinhyung Kim , Joohwan Chung , Jinsook Kim , Haccheol Kim , Byungsu Lee , Changsoo Kim , Jungseek Jung , Dongki Kim , Sangtae Kim , Giyong Nam , Youngchul Park , Kyungbo Shim , Daesung Lim , Sanghoon Jang
IPC分类号: C23F1/30 , H01L21/3213 , C09K13/04 , C09K13/00 , H01L21/465 , C09K13/06 , H01L21/302 , H01L21/306 , H01L29/786 , C23F1/16
摘要: A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.