公开(公告)号：US20140015003A1

公开(公告)日：2014-01-16

申请号：US13761127

申请日：2013-02-06

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kwang Soo Koo ,  Bum Seok Suh ,  In Hyuk Song ,  Jae Hoon Park ,  Dong Soo Seo

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/045 ,  H01L29/0623 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397

Abstract: Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region.

Abstract translation: 本发明公开了一种半导体器件及其制造方法。 半导体器件包括半导体衬底，形成在半导体衬底的内部的上部区域中的基极区域，穿过基极区域并具有倒三角形形状的至少一个栅极电极，形成为封闭 半导体衬底的上部和栅电极，形成在栅极电极和栅极绝缘膜的上部的层间绝缘膜，形成在基极区域内和栅电极两侧的发射极区域， 形成在基极区域的上部的发射极金属层和层间绝缘膜，以及形成为包围栅电极的下部并与基极间隔开的缓冲区域。